Czochralski法生长Lu2SiO5:e晶体的发光特性

人工晶体学报 ›› 2004, Vol. 33 ›› Issue (4): 520-523.

Czochralski法生长Lu2SiO5:e晶体的发光特性

任国浩;秦来顺;陆晟;李焕英

中国科学院上海硅酸盐研究所,上海,200050

出版日期:2004-08-15 发布日期:2021-01-20
基金资助:
国家自然科学基金(50272072)

Luminescence Properties of Lu2SiO5:Ce Crystals Grown by Czochralski Method

Online:2004-08-15 Published:2021-01-20

摘要/Abstract

摘要： 本文使用铱坩埚感应加热Czochralski法成功地生长出了无色透明且尺寸达φ50mm×60mm 的Lu2SiO5:e晶体.XRD结构分析表明, 该晶体为单斜结构.在室温下分别以X射线和紫外光为激发源测量了该晶体的发射光谱,获得的发射波长分别为403nm和420nm,光衰减时间为41ns,光产额达32000p/MeV.发射光谱的双峰结构以及晶体的发光特性证明其发光源于Ce3+离子的5d1→5F5/2 和 5d1→5F7/2跃迁.

关键词: LSO;晶体生长;发光性能

Abstract: Lu2SiO5:e crystals with dimension of φ50mm×60mm were grown by Czochralski method from an inductively heated iridium crucible. The crystal structure was examined by XRD and confirmed to be monoclinic symmetry. Its optical transmission, UV-excited, X-ray excited emission and light yield were measured at room temperature. The results show that the emission spectra exhibit doublet structure peaking at 403nm and 420nm,which can be attributed to the transition of the Ce3+ ions at Lu site from the lowest 5d level to the two 4f ground states,5d′→5F5/2 and 5d′→5F7/2.The decay time tested under gamma ray excitation is 41ns.The best light yield is 32000P/MeV.

Key words: Lu2SiO5:e crystals with dimension of φ50mm×60mm were grown by Czochralski method from an inductively heated iridium crucible. The crystal structure was examined by XRD and confirmed to be monoclinic symmetry. Its optical transmission, UV-excited, X-ray excited emission and light yield were measured at room temperature. The results show that the emission spectra exhibit doublet structure peaking at 403nm and 420nm,which can be attributed to the transition of the Ce3+ ions at Lu site from the lowest 5d level to the two 4f ground states,5d′→5F5/2 and 5d′→5F7/2.The decay time tested under gamma ray excitation is 41ns.The best light yield is 32000P/MeV.

中图分类号:

任国浩;秦来顺;陆晟;李焕英. Czochralski法生长Lu2SiO5:e晶体的发光特性[J]. 人工晶体学报, 2004, 33(4): 520-523.

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