关键词: MOCVD;Turbo-Disc;生长动力学;GaInP

Abstract: A practical Ⅲ-Ⅴ group semiconductor material growth model was obtained, when the Ⅲ-Ⅴ group materials growth was investigated under MOCVD mass flow control growth process. This model is based on the molecular dynamics and chemical kinetics, etc.The Turbo-Disc growth model was formalized specified after the Turbo-Disc heat and transfer flow model was applied in the boundary layer. The relation between the inlet reactant parameters(IPs) and the boundary layer growth parameters is directly connected in this growth model. This theoretical model was found to be useful in explaining the matched GaInP/GaAs , the ternary-alloy growth. The calculations are consistent with the GaInP/GaAs epitaxial experiment results. This model is very efficient for the mass production to get the matched ternary-alloy epitaxial layers.

Key words: A practical Ⅲ-Ⅴ group semiconductor material growth model was obtained, when the Ⅲ-Ⅴ group materials growth was investigated under MOCVD mass flow control growth process. This model is based on the molecular dynamics and chemical kinetics, etc.The Turbo-Disc growth model was formalized specified after the Turbo-Disc heat and transfer flow model was applied in the boundary layer. The relation between the inlet reactant parameters(IPs) and the boundary layer growth parameters is directly connected in this growth model. This theoretical model was found to be useful in explaining the matched GaInP/GaAs , the ternary-alloy growth. The calculations are consistent with the GaInP/GaAs epitaxial experiment results. This model is very efficient for the mass production to get the matched ternary-alloy epitaxial layers.