InP/GaP晶格失配界面的电特性

人工晶体学报 ›› 2007, Vol. 36 ›› Issue (5): 1022-1025.

InP/GaP晶格失配界面的电特性

李果华;孙艳宁;Aristo Yulius;Christine C.Broadbridge;Jerry M.Woodall

江南大学理学院,无锡,214122;Department of Electrical Engineering,Yale University,New Haven,CT06520,USA;Department of Physics,Southern Connecticut State University,New Haven,CT 06515,USA

出版日期:2007-10-15 发布日期:2021-01-20

Electrical Properties Mismatched Interface between InP and GaP

LI Guo-hua;SUN Yan-ning;Aristo Yulius;Christine C.Broadbridge;Jerry M.Woodall

Online:2007-10-15 Published:2021-01-20

摘要/Abstract

摘要： 本文研究了InP/GaP晶格失配界面的电特性.HRTEM图象表明在界面存在90°位错缺陷的应变缓释.ECV表明界面存在高密度载流子层.AFM图象表明本研究中获得了粗糙度为2.48nm的良好InP异质外延层.并对于InP界面给出了一个基于费米能级钉扎的模型来解释观察到的电性质.

关键词: 晶格失配;InP/GaP界面;缺陷

Abstract: The electrical properties of the mismatched interface between InP and GaP have been investigatedted. High resolution transmission electron microscopy (HRTEM) image shows the presence of strain relieving,90°misfit dislocations at the InP/GaP interface. Electrochemical capacitance voltage(ECV)profiling indicates the presence of a high-density sheet of carriers at the interface. AFM image shows a pretty good InP epitaxial layer with surface roughness of 2.48nm has been obtained. A model based on Fermi-level pinning in InP at the interface by misfit dislocations is proposed to account for the observed electrical behavior.

Key words: The electrical properties of the mismatched interface between InP and GaP have been investigatedted. High resolution transmission electron microscopy (HRTEM) image shows the presence of strain relieving,90°misfit dislocations at the InP/GaP interface. Electrochemical capacitance voltage(ECV)profiling indicates the presence of a high-density sheet of carriers at the interface. AFM image shows a pretty good InP epitaxial layer with surface roughness of 2.48nm has been obtained. A model based on Fermi-level pinning in InP at the interface by misfit dislocations is proposed to account for the observed electrical behavior.

中图分类号:

TN304

李果华;孙艳宁;Aristo Yulius;Christine C.Broadbridge;Jerry M.Woodall. InP/GaP晶格失配界面的电特性[J]. 人工晶体学报, 2007, 36(5): 1022-1025.

LI Guo-hua;SUN Yan-ning;Aristo Yulius;Christine C.Broadbridge;Jerry M.Woodall. Electrical Properties Mismatched Interface between InP and GaP[J]. Journal of Synthetic Crystals, 2007, 36(5): 1022-1025.

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