关键词: 阴离子掺杂;PbWO_4晶体;光产额;发光衰减

Abstract: This article presents the growth and luminescence properties of negative F~-, Cl~-, I~- and S~(2-) ions doped PbWO_4 crystals. Based on the results of measuring their X-ray powder diffraction, UV-VIS optical transmittance, photoluminescence, light yield and luminescence decay time, it can been seen that F- ion doping can obviously increase the optical transmittance at the 350-400 nm range, and enhance the luminescence intensity of PbWO_4 crystal, but the increase of the luminous intensity is mainly attributed to the slow illumination. Along with the increase of doped negative ions radius and the electric charge number,however, the luminescence intensity of PbWO_4 crystal decrease gradually and evident red-shift of the absorption edge is observed.

Key words: This article presents the growth and luminescence properties of negative F~-, Cl~-, I~- and S~(2-) ions doped PbWO_4 crystals. Based on the results of measuring their X-ray powder diffraction, UV-VIS optical transmittance, photoluminescence, light yield and luminescence decay time, it can been seen that F- ion doping can obviously increase the optical transmittance at the 350-400 nm range, and enhance the luminescence intensity of PbWO_4 crystal, but the increase of the luminous intensity is mainly attributed to the slow illumination. Along with the increase of doped negative ions radius and the electric charge number,however, the luminescence intensity of PbWO_4 crystal decrease gradually and evident red-shift of the absorption edge is observed.