关键词: 纳米结构;半导体;缺陷

Abstract: In-doped ZnGa2O4 nanowires were synthesized by a thermal evaporation method. Transmission electron microscopy and energy-dispersive X-ray spectroscopy were used to study the structures and components of the product. Twinning and planar dislocations were observed in zigzag and bamboo-like nanowires. The zigzag nanowires are [111] twinning. They grow along the < 111 > direction. Thetwinning angle is 140° . Nanowires with bamboo-like joints grow along the < 011 > direction. Two kinds of planar dislocations are observed in them. The dislocations have an angle about 54° and 90° to the growth direction, respectively. The defects should be important to the properties of the nanostructures.

Key words: In-doped ZnGa2O4 nanowires were synthesized by a thermal evaporation method. Transmission electron microscopy and energy-dispersive X-ray spectroscopy were used to study the structures and components of the product. Twinning and planar dislocations were observed in zigzag and bamboo-like nanowires. The zigzag nanowires are [111] twinning. They grow along the < 111 > direction. Thetwinning angle is 140° . Nanowires with bamboo-like joints grow along the < 011 > direction. Two kinds of planar dislocations are observed in them. The dislocations have an angle about 54° and 90° to the growth direction, respectively. The defects should be important to the properties of the nanostructures.