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人工晶体学报 ›› 2017, Vol. 46 ›› Issue (4): 651-656.

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O2/(O2+Ar)流量比对ZnO-0.25mol; V2O5薄膜缺陷类型的影响

张俊峰;吴隽;龙晓阳;祝柏林;李涛涛;姚亚刚   

  1. 武汉科技大学材料与冶金学院,省部共建耐火材料与冶金国家重点实验室,武汉 430081;中国科学院苏州纳米技术与纳米仿生研究所先进材料研究部,苏州,215123
  • 出版日期:2017-04-15 发布日期:2021-01-20
  • 基金资助:
    中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室开放课题(15QT02)

Effect of O2/(O2+Ar) Ratios on the Type of Defects in ZnO-0.25mol; V2O5 Thin Films

ZHANG Jun-feng;WU Jun;LONG Xiao-yang;ZHU Bai-lin;LI Tao-tao;YAO Ya-gang   

  • Online:2017-04-15 Published:2021-01-20

摘要: 利用射频磁控溅射技术在玻璃衬底上沉积ZnO-0.25mol; V2O5(ZnO∶V)薄膜,研究了O2/(O2+Ar)流量比(0;~87.5;)对ZnO∶V薄膜中缺陷的影响.研究结果表明:沉积的ZnO∶V薄膜为具有c轴取向的纤锌矿结构,V以五价和四价形式共存其中.ZnO∶V薄膜中的缺陷态为氧空位(VO)和间隙锌(Zni)杂化形成的复合体,两者比例随O2/(O2+Ar)流量比而变化.

关键词: ZnO∶V薄膜;射频磁控溅射;掺氧量;缺陷态

Abstract: ZnO-0.25mol; Vanadium (ZnO∶V) thin films were deposited on glass substrate by RF magnetron sputtering.The type of defects in ZnO∶V thin films under different O2/(O2+Ar) ratios (0;-87.5;) was investigated.The deposited ZnO∶V thin films have wurtzite structure and show c-axis preferred orientation.V4+ and V5+ ions coexist in the films.The defect in ZnO∶V thin films is the complex of VO and Zni.And the ratio of VO to Zni changed with the O2/(O2+Ar) ratio.

Key words: ZnO-0.25mol; Vanadium (ZnO∶V) thin films were deposited on glass substrate by RF magnetron sputtering.The type of defects in ZnO∶V thin films under different O2/(O2+Ar) ratios (0;-87.5;) was investigated.The deposited ZnO∶V thin films have wurtzite structure and show c-axis preferred orientation.V4+ and V5+ ions coexist in the films.The defect in ZnO∶V thin films is the complex of VO and Zni.And the ratio of VO to Zni changed with the O2/(O2+Ar) ratio.

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