关键词: 射频磁控溅射;Zn(O,S)缓冲层;CIGS

Abstract: Different Zn(O,S) thin films were prepared with various magnetron sputtering (MS) power and applied to the CIGS heterojunction solar cell, the Zn(O,S) thin films were investigated by XRD, XRF, profilometer, ultraviolet-visible-near infrared spectrophotometer, moreover, the analysis of MS-Zn(O,S)/CIGS heterojunction devices were completed by scanning electron microscope and wxAMPS simulation software.The results show that, the sulfur content within Zn(O,S) thin film and the optical band gap decreases significantly with lower sputtering power (<80 W).Meanwhile, α-ZnS generated in the amorphous or nano-crystalline Zn(O,S) thin film.With a higher sputtering power (>100 W), the sulfur content and optical band gap will increase and then become stable, moreover, α-ZnS can be removed within significant increased crystallization of Zn(O,S) thin film.According to the simulated results, the degradation of MS-Zn(O,S)/CIGS devices prepared under lower sputtering power (<80 W) are due to high offset between buffer layer and absorber layer which can lead to high recombination in SCR, while the degradation of the devices prepared under higher sputtering power (>100 W) are due to the high acceptor-like defect density at the interface of MS-Zn(O,S)/CIGS heterojunction which is induced by plasma bombing with higher sputtering power.

Key words: Different Zn(O,S) thin films were prepared with various magnetron sputtering (MS) power and applied to the CIGS heterojunction solar cell, the Zn(O,S) thin films were investigated by XRD, XRF, profilometer, ultraviolet-visible-near infrared spectrophotometer, moreover, the analysis of MS-Zn(O,S)/CIGS heterojunction devices were completed by scanning electron microscope and wxAMPS simulation software.The results show that, the sulfur content within Zn(O,S) thin film and the optical band gap decreases significantly with lower sputtering power (<80 W).Meanwhile, α-ZnS generated in the amorphous or nano-crystalline Zn(O,S) thin film.With a higher sputtering power (>100 W), the sulfur content and optical band gap will increase and then become stable, moreover, α-ZnS can be removed within significant increased crystallization of Zn(O,S) thin film.According to the simulated results, the degradation of MS-Zn(O,S)/CIGS devices prepared under lower sputtering power (<80 W) are due to high offset between buffer layer and absorber layer which can lead to high recombination in SCR, while the degradation of the devices prepared under higher sputtering power (>100 W) are due to the high acceptor-like defect density at the interface of MS-Zn(O,S)/CIGS heterojunction which is induced by plasma bombing with higher sputtering power.