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人工晶体学报 ›› 2017, Vol. 46 ›› Issue (9): 1791-1797.

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Mg掺杂对CaMnO3基热电氧化物电子结构及电性能的影响研究

陈湘;任一新;张飞鹏;杨欢;张久兴;张忻   

  1. 河南城建学院化学与材料工程学院,平顶山,467036;河南城建学院数理学院,建筑光伏一体化河南省工程实验室,平顶山 467036;河南城建学院数理学院,建筑光伏一体化河南省工程实验室,平顶山 467036;合肥工业大学材料科学与工程学院,新型功能材料与器件安徽省重点实验室,合肥230009;合肥工业大学材料科学与工程学院,新型功能材料与器件安徽省重点实验室,合肥230009;北京工业大学材料科学与工程学院,新型功能材料教育部重点实验室,北京 100124;北京工业大学材料科学与工程学院,新型功能材料教育部重点实验室,北京 100124
  • 出版日期:2017-09-15 发布日期:2021-01-20
  • 基金资助:
    国家自然科学基金(51572066);河南省自然科学基金(162300410007)

Effect of Mg Doping on Electronic Structure and Electrical Properties of CaMnO3 Thermoelectric Oxide

CHEN Xiang;REN Yi-xin;ZHANG Fei-peng;YANG Huan;ZHANG Jiu-xing;ZHANG Xin   

  • Online:2017-09-15 Published:2021-01-20

摘要: 采用超软赝势密度泛函理论计算的方法研究了Mg掺杂Ca位CaMnO3基复合氧化物的能带结构、电子态密度和电荷分布状况,在此基础上分析了Mg掺杂氧化物的电性能.结果表明,Mg掺杂CaMnO3氧化物仍然呈间接带隙型能带结构,带隙宽度由0.756eV减小到0.734eV.CaMnO3氧化物和Mg掺杂CaMnO3氧化物的自旋态密度曲线极值点均位于为-0.8eV附近.Mg掺杂CaMnO3氧化物中Mn原子对体系费米面态密度的贡献有所减小,O原子和Ca原子对体系费米面态密度的贡献有所增大.Mg原子比Ca原子具有更强的释放电子的能力,Mg掺杂对于CaMnO3氧化物属于电子型掺杂.Mg掺杂CaMnO3氧化物导电性能增强,电性能提高.

关键词: CaMnO3;Mg掺杂;电子结构

Abstract: The electronic structure , density of states and charge populations of the Mg doped CaMnO 3 oxide for Ca site has been studied by the psudo-potential density funtional theory calculation method , the electrical properties of the doped oxide have been analyzed thereafter .The calculational results show that the Mg doped CaMnO3 oxide has indirect band gap yet , the band gap has been slightly decreased from 0. 756 eV to 0.734 eV.The peak value of density of states curves locates at -0.8 eV for the pure CaMnO3 oxide and the Mg doped CaMnO 3 oxide .The Mn contributes less to density of states at Fermi level , however the O atom and the Ca atom contribute more to density of states at Fermi level .The Mg has stronger capability of releasing electrons into the system than that of the Ca , it should belong to electron carrier doping type for the Mg doping for Ca for the CaMnO 3 oxide system .The Mg doping for Ca should enhance the electrical conduction capablity for the CaMnO 3 oxide , the electrical property should be strengthed .

Key words: The electronic structure , density of states and charge populations of the Mg doped CaMnO 3 oxide for Ca site has been studied by the psudo-potential density funtional theory calculation method , the electrical properties of the doped oxide have been analyzed thereafter .The calculational results show that the Mg doped CaMnO3 oxide has indirect band gap yet , the band gap has been slightly decreased from 0. 756 eV to 0.734 eV.The peak value of density of states curves locates at -0.8 eV for the pure CaMnO3 oxide and the Mg doped CaMnO 3 oxide .The Mn contributes less to density of states at Fermi level , however the O atom and the Ca atom contribute more to density of states at Fermi level .The Mg has stronger capability of releasing electrons into the system than that of the Ca , it should belong to electron carrier doping type for the Mg doping for Ca for the CaMnO 3 oxide system .The Mg doping for Ca should enhance the electrical conduction capablity for the CaMnO 3 oxide , the electrical property should be strengthed .

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