关键词: 掺铝氧化锌;湿法刻蚀;太阳电池;雾度

Abstract: As-deposited AZO thin films prepared by magnetron-sputtering were wet etched in diluted HCl to produce textured surface , and the effects of hydrochloric acid concentration and etching time on surface morphology , optical and electrical properties were investigated .The results indicate that the wet etched AZO film shows a large size crater morphology , a high transmittance of 70;-75;at the long wavelength after 500 nm, an increasement haze ratio as high as 48; at 800 nm, and a degradation of square resistance while the light trapping ability increases rapidly on surface of the film .The high concentration of hydrochloric acid can cause the surface of the film to exhibit a fast concave morphology and give a higher haze value .In order to improve the conductivity while maintain the higher haze ratio on surface of the film, a sputtering-compensation method was utilized to deposite the thickness of 300 nm AZO film on the textured surface of samples etched in 2;HCl for 30 s.The compensated AZO samples with high haze ratio shows a small square resistance ( less than 10 Ω/sq) , and a silicon thin film solar cell with a high efficiency 9 .24;was fabricated by using the compensated AZO film as front electrode .As a candidate of front electrode for silicon thin film solar cell , the textured AZO thin films with high haze ratio prepared by wet-etching plus sputtering-compensation method exhibit a good performance of high light trapping ability and low square resistance .

Key words: As-deposited AZO thin films prepared by magnetron-sputtering were wet etched in diluted HCl to produce textured surface , and the effects of hydrochloric acid concentration and etching time on surface morphology , optical and electrical properties were investigated .The results indicate that the wet etched AZO film shows a large size crater morphology , a high transmittance of 70;-75;at the long wavelength after 500 nm, an increasement haze ratio as high as 48; at 800 nm, and a degradation of square resistance while the light trapping ability increases rapidly on surface of the film .The high concentration of hydrochloric acid can cause the surface of the film to exhibit a fast concave morphology and give a higher haze value .In order to improve the conductivity while maintain the higher haze ratio on surface of the film, a sputtering-compensation method was utilized to deposite the thickness of 300 nm AZO film on the textured surface of samples etched in 2;HCl for 30 s.The compensated AZO samples with high haze ratio shows a small square resistance ( less than 10 Ω/sq) , and a silicon thin film solar cell with a high efficiency 9 .24;was fabricated by using the compensated AZO film as front electrode .As a candidate of front electrode for silicon thin film solar cell , the textured AZO thin films with high haze ratio prepared by wet-etching plus sputtering-compensation method exhibit a good performance of high light trapping ability and low square resistance .