不同退火条件对PEALD制备的Ga2O3薄膜特性的影响

人工晶体学报 ›› 2021, Vol. 50 ›› Issue (5): 838-844.

不同退火条件对PEALD制备的Ga₂O₃薄膜特性的影响

马海鑫^1,2, 丁广玉¹, 邢艳辉¹, 韩军¹, 张尧¹, 崔博垚¹, 林文魁², 尹浩田¹, 黄兴杰¹

1.北京工业大学微电子学院,光电技术教育部重点实验室,北京 100124;
2.中国科学院苏州纳米技术与纳米仿生研究所,纳米器件与应用重点实验室,苏州 215123

收稿日期:2021-02-05 出版日期:2021-05-15 发布日期:2021-06-15
通讯作者: 邢艳辉,副教授。E-mail:xingyanhui@bjut.edu.cn林文魁,工程师。E-mail:wklin2007@sinano.ac.cn
作者简介:马海鑫(1996—),女,河北省人,硕士研究生。E-mail:1319125102@qq.com
基金资助:
国家自然科学基金(61574011);北京市自然科学基金(4182015,4182014)

Effects of Different Annealing Conditions on the Characteristics of Ga₂O₃ Thin Films Prepared by PEALD

MA Haixin^{1, 2}, DING Guangyu¹, XING Yanhui¹, HAN Jun¹, ZHANG Yao¹, CUI Boyao¹, LIN Wenkui², YIN Haotian¹, HUANG Xingjie¹

1. Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China;
2. Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2021-02-05 Online:2021-05-15 Published:2021-06-15

摘要/Abstract

摘要： 利用等离子增强原子层沉积技术(PEALD)在c面蓝宝石衬底上制备了氧化镓(Ga₂O₃)薄膜,研究了退火气氛(v(N₂)∶v(O₂)=1∶1(体积比)、空气和N₂)及退火时间对Ga₂O₃薄膜晶体结构、表面形貌和光学性质的影响。研究结果表明,退火前的氧化镓处于亚稳态,不同退火气氛下退火后晶体结构发生明显改变,而且退火气氛中N₂比例增加有利于Ga₂O₃重结晶。在N₂气氛下退火达到30 min,薄膜结构已由亚稳态转变成择优取向的β-Ga₂O₃。而且表面形貌分析表明,退火30 min后表面形貌开始趋于稳定,表面晶粒密度不再增加。另外实验样品在 400~800 nm的平均透射率几乎是100%,且光吸收边陡峭。采用N₂气氛退火,对于富氧环境下沉积的Ga₂O₃更利于薄膜表面原子迁移,以及择优取向Ga₂O₃重结晶。

关键词: 氧化镓, 退火条件, 等离子增强原子层沉积, 晶体结构, 表面形貌, 光学性质

Abstract: Gallium oxide (Ga₂O₃) thin films were prepared on c-plane sapphire substrates by plasma enhanced atomic layer deposition (PEALD). The effects of annealing atmosphere (v(N₂)∶v(O₂)=1∶1 (volume ratio), Air and N₂) and annealing time on the crystal structure, surface morphology and optical properties of Ga₂O₃ films were studied. The research results indicate that gallium oxide is in metastable state before annealing, and the crystal structure changes significantly after annealing in different annealing atmospheres, and the increase in the proportion of N₂ in annealing atmosphere is beneficial to the recrystallization of Ga₂O₃. Furthermore, the effect of annealing time was further studied under N₂ atmosphere, and the results show that the structure of the thin film changes from metastable state to β-Ga₂O₃ with good single orientation after annealing for 30 min in N₂ atmosphere. And the surface morphology analysis show that the surface morphology begins to stabilize after annealing for 30 min, and the surface grain density no longer increases. In addition, the average transmittance of the sample in the range of 400 nm to 800 nm is almost 100%, and the light absorption edge is steep. Annealing in N₂ atmosphere is more conducive to the migration of atoms on the surface of the film for Ga₂O₃ deposited in an oxygen-rich environment, and Ga₂O₃ recrystallization is preferred.

Key words: Ga₂O₃, annealing condition, PEALD, crystal structure, surface morphology, optical property

中图分类号:

O47
O484.4

马海鑫, 丁广玉, 邢艳辉, 韩军, 张尧, 崔博垚, 林文魁, 尹浩田, 黄兴杰. 不同退火条件对PEALD制备的Ga₂O₃薄膜特性的影响[J]. 人工晶体学报, 2021, 50(5): 838-844.

MA Haixin, DING Guangyu, XING Yanhui, HAN Jun, ZHANG Yao, CUI Boyao, LIN Wenkui, YIN Haotian, HUANG Xingjie. Effects of Different Annealing Conditions on the Characteristics of Ga₂O₃ Thin Films Prepared by PEALD[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(5): 838-844.

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不同退火条件对PEALD制备的Ga₂O₃薄膜特性的影响

Effects of Different Annealing Conditions on the Characteristics of Ga₂O₃ Thin Films Prepared by PEALD

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