单晶硅低裂纹损伤切片加工技术研究进展

摘要/Abstract

摘要： 单晶硅晶圆衬底的直径增大、厚度减薄和集成电路(IC)制程减小是集成电路领域主流发展趋势。随着集成电路制程减小至5 nm,对单晶硅晶圆衬底质量的要求越来越高。切片加工是晶圆衬底制造的第一道机械加工工序,金刚石线锯切片是大尺寸单晶硅切片加工的主要技术手段。本文介绍了金刚石线锯切片加工的发展趋势和面临的挑战,阐述了以单晶硅刻划加工研究为基础的金刚石线锯切片加工材料去除机制和电镀金刚石线锯三维形貌建模技术,总结了单晶硅切片加工的晶片表面创成机制和裂纹损伤产生机制,展望了单晶硅低裂纹损伤切片加工的工艺措施,指出了单晶硅切片加工技术的发展趋势,对集成电路制造技术的发展具有一定的指导意义。

关键词: 单晶硅, 切片加工技术, 微裂纹损伤, 金刚石线锯, 机械刻划

Abstract: The developing trend in the IC manufacturing field is to increase the wafer diameter, decrease the wafer substrate thickness and decrease the semiconductor manufacturing process technology. As the semiconductor manufacturing process technology decrease to 5 nm, the requirement of wafer substrate quality of single crystal silicon is higher and higher. Slicing is the first machining process in chip substrate wafer manufacturing, and the diamond wire saw slicing is the main technology for the large size single crystal silicon slicing. In this paper, the development prospects and challenges of diamond wire saw slicing technology are introduced. The material removal mechanism of diamond wire saw slicing based on the single crystal silicon scratching and the 3D morphology modeling technology of electroplated diamond wire saw are presented. The mechanism of sliced wafer surface generation and crack damage are summarized. The technological measures of low crack damage slicing of single crystal silicon are prospected. The development trend of single crystal silicon slicing technology is pointed out. It is of great significance to the development of IC manufacturing technology.

Key words: single crystal silicon, slicing technology, micro crack damage, diamond wire saw, mechanical scratching

中图分类号:

TG58

葛梦然, 毕文波. 单晶硅低裂纹损伤切片加工技术研究进展[J]. 人工晶体学报, 2021, 50(5): 967-973.

GE Mengran, BI Wenbo. Research Progress on Low Crack Damage Slicing Technology for Single Crystal Silicon[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(5): 967-973.

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