高温溶液法生长SiC单晶的研究进展

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (1): 3-20.

高温溶液法生长SiC单晶的研究进展

王国宾^1,2, 李辉¹, 盛达^1,2, 王文军^1,2,3, 陈小龙^1,2,3

1.中国科学院物理研究所,北京 100190;
2.中国科学院大学,北京 100049;
3.东莞松山湖材料实验室,东莞 523429

收稿日期:2021-09-06 出版日期:2022-01-15 发布日期:2022-02-09
通讯作者: 陈小龙,博士,研究员。E-mail:chenx29@iphy.ac.cn
陈小龙(1964—),中国科学院物理研究所研究员、博导,先进材料与结构分析重点实验室主任。1999年国家杰出青年科学基金获得者,2020年度国家自然科学二等奖获得者。长期从事新功能材料探索、新物性和宽禁带半导体晶体生长的研究和产业化工作。兼任国际衍射数据中心(ICDD)副主席(2016—),《人工晶体学报》编委,曾兼任中国晶体学会副理事长(2004—2012),先后承担国家重大科学研究计划项目(首席科学家)等40余项。在国际学术刊物上发表论文390余篇,申请国家发明专利50项(已授权40项),起草国家标准3项。
作者简介:王国宾(1995—),男,山西省人,博士研究生。E-mail:wangguobin18@mails.ucas.ac.cn
基金资助:
北京市科技计划项目(Z201100004020003,Z161100002116018,Z211100004821004)

Research Progress on the Growth of SiC Single Crystal via High Temperature Solution Growth Method

WANG Guobin^1,2, LI Hui¹, SHENG Da^1,2, WANG Wenjun^1,2,3, CHEN Xiaolong^1,2,3

1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Song Shan Lake Materials Laboratory, Dongguan 523429, China

Received:2021-09-06 Online:2022-01-15 Published:2022-02-09

摘要/Abstract

摘要： 碳化硅(SiC)作为第三代半导体材料,不仅禁带宽度较大,还兼具热导率高、饱和电子漂移速率高、抗辐射性能强、热稳定性和化学稳定性好等优良特性,在高温、高频、高功率电力电子器件和射频器件中有很好的应用潜力。高质量、大尺寸、低成本SiC单晶衬底的制备是实现SiC器件大规模应用的前提。受技术与工艺水平限制,目前SiC单晶衬底供应仍面临缺陷密度高、成品率低和成本高等问题。高温溶液生长(high temperature solution growth, HTSG)法生长SiC单晶具有晶体结晶质量高、易扩径、易实现p型掺杂等独特的优势,有望成为大规模量产SiC单晶的主要方法之一,目前该方法的主流技术模式是顶部籽晶溶液生长(top seeded solution growth, TSSG)法。本文首先回顾总结了TSSG法生长SiC单晶的发展历程,接着介绍和分析了该方法的基本原理和生长过程,然后从晶体生长热力学和动力学两方面总结了该方法的研究进展,并归纳了该方法的优势,最后分析了TSSG法生长SiC单晶技术在未来的研究重点和发展方向。

关键词: 宽禁带半导体, 碳化硅, 高温溶液法, 顶部籽晶溶液法, 助熔剂, 晶体生长

Abstract: As a third-generation semiconductor material, silicon carbide (SiC) has excellent properties such as wide bandgap, high thermal conductivity, high saturation electron drift velocity, strong radiation resistance, good thermal and chemical stability, et al. It has great application potential in high temperature, high power, high frequency power electronic devices and radio frequency devices. The production of high-quality, large-size, and low-cost SiC single crystal substrates is a prerequisite for large-scale applications of SiC devices. However, the supply of SiC single crystal substrates still faces some challenges, such as high defect density, low yield and high cost. High temperature solution growth (HTSG) technique, with top seeded solution growth (TSSG) as the main technical model at present, has advantages of fabrication of SiC with low defects density, easy to enlarge diameter, and easy to obtain p-type doping. In the future, it is expected to become one of the mainstream technologies to mass produce SiC single crystals. In this paper, the development of SiC single crystal grown by TSSG is reviewed firstly. Then the principle and growth process of SiC single crystal growth by TSSG are introduced and analyzed. The research progress of TSSG for SiC single crystal growth is summarized from crystal growth thermodynamics and kinetics. The unique advantages of this technology are summarized. Finally, the future research direction and challenges of this method are given.

Key words: wide bandgap semiconductor, SiC, high temperature solution growth (HTSG), top seeded solution growth (TSSG), flux, crystal growth

中图分类号:

O734

王国宾, 李辉, 盛达, 王文军, 陈小龙. 高温溶液法生长SiC单晶的研究进展[J]. 人工晶体学报, 2022, 51(1): 3-20.

WANG Guobin, LI Hui, SHENG Da, WANG Wenjun, CHEN Xiaolong. Research Progress on the Growth of SiC Single Crystal via High Temperature Solution Growth Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 3-20.

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