磷/硼共掺杂纳米硅的微观结构与光电性质

摘要/Abstract

摘要： 采用射频(RF)等离子体增强化学气相沉积系统制备了硅/二氧化硅多层膜样品,在异质结限制性晶化作用下得到了尺寸均匀的磷/硼共掺杂纳米硅。通过拉曼光谱(Raman)、透射电镜(TEM)和X射线光电子能谱(XPS)研究了磷/硼共掺杂纳米硅/二氧化硅多层膜的微观结构和杂质的分布特点。低温电子顺磁共振(EPR)结果表明,磷、硼杂质可以改变纳米硅的表面化学结构并充分钝化表面处的非辐射复合缺陷。Hall效应测试发现磷和硼杂质可替位式地掺入到纳米硅的内部,且磷杂质具有更高的掺杂效率;通过改变磷硼杂质的掺杂比例可以调控纳米硅的导电类型和载流子浓度。在小尺寸磷/硼共掺杂纳米硅中获得了1 200 nm处满足光通信波段的近红外发光,并通过调控磷的掺杂浓度实现了近红外发光的增强。通过时间分辨荧光光谱测试,结合EPR结果探讨了磷掺杂对纳米硅内部辐射复合和非辐射复合过程的调控使1 200 nm发光增强的物理机制。

关键词: 纳米硅, 掺杂, 微结构, 电子顺磁共振, 霍尔效应, 光致发光, 光电性质

Abstract: Si/SiO₂ multilayers were fabricated by RF plasma enhanced chemical vapor deposition system, and phosphorus/boron (P/B) co-doped silicon nanocrystals (Si NCs) were obtained under the constricted crystallization of multilayers structures. Microstructures of P/B co-doped Si NCs/SiO₂ multilayers and impurities distributions were studied by Raman, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Low temperature electron paramagnetic resonance (EPR) results indicate that the non-radiative defects on Si NCs surfaces can be passivated by P and B impurities. Hall effect manifests that P and B impurities can substitutionally incorporate into Si NCs inner. Meanwhile, P impurity exhibits higher doping efficiency than B. Near-infrared photoluminescence near 1 200 nm with the wavelength compatible for optical telecommunication was detected in the small-sized P/B co-doped Si NCs. The emission intensity can be enhanced by regulating the nominal P-doping concentration. According to the time-resolved photoluminescence and EPR results, the physical mechanisms of P-doping on the radiative and non-radiative recombination processes of Si NCs were discussed, which are responsible for the enhancement of 1 200 nm photoluminescence.

Key words: Si NCs, doping, microstructure, EPR, Hall effect, photoluminescence, optical-electrical property

中图分类号:

李东珂, 陈佳明, 孙腾, 翟章印, 陈贵宾. 磷/硼共掺杂纳米硅的微观结构与光电性质[J]. 人工晶体学报, 2022, 51(1): 35-41.

LI Dongke, CHEN Jiaming, SUN Teng, ZHAI Zhangyin, CHEN Guibin. Microstructure and Optical-Electrical Properties of Phosphorus/Boron Co-Doped Silicon Nanocrystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(1): 35-41.

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