硒化铟材料的发展及其光电器件应用

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1703-1721.

硒化铟材料的发展及其光电器件应用

赵清华^1,2, 郑丹¹, 陈鹏¹, 王涛^1,2, 介万奇¹

1.西北工业大学,辐射探测材料与器件工信部重点实验室,西安 710072;
2.西北工业大学深圳研究院,深圳 518063

收稿日期:2022-07-27 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 王涛,博士,教授。E-mail:taowang@nwpu.edu.cn
介万奇,博士,教授。E-mail:jwq@nwpu.edu.cn
作者简介:赵清华(1991—),男,安徽省人,博士,教授。E-mail:qinghua_zhao@ nwpu.edu.cn。赵清华,博士,教授,博士生导师。工信部国家级青年人才。2013年在西北工业大学材料科学与工程专业获得学士学位,2016年在西北工业大学材料学专业获得硕士学位,2020年入职西北工业大学任教授。主要从事集成电路-光电子信息-光电子技术相关的新型半导体材料及其光电子器件的设计、构筑及其性能优化研究。
王涛,博士,教授,博士生导师。国家百千万人才工程人选,教育部国家级青年人才,辐射探测材料与器件工信部重点实验室副主任。2002年在西北工业大学材料科学与工程专业获得学士学位,2008年在西北工业大学材料学专业获得博士学位,2010年在西北工业大学博士后出站并先后晋升副教授、教授。主要从事核辐射探测器用化合物半导体晶体生长及性能研究,将籽晶技术引入布里奇曼法生长,实现了CZT晶体的全单晶生长,提出了高阻CZT晶体的四能级电学补偿模型,解决了核辐射探测应用的性能控制难题。成果应用于多项国家重大工程并实现转化。获国家技术发明二等奖(排2)1项、省部级奖励5项。任中国晶体学会晶体应用与产业分会理事、中国硅酸盐学会晶体生长分会理事、CSTM标准委员会人工晶体技术委员会委员、《人工晶体学报》青年编委。
介万奇,教授,博士生导师,洪堡学者。《人工晶体学报》副主编。曾任中国材料研究学会青年委员会常务理事,中国航空学会航空材料专业委员会委员,西北工业大学材料科学与工程学院院长。“973”项目首席科学家,国家“百千万人才”工程计划入选人才,国家杰出青年科学基金获得者,全国模范教师,全国优秀科技工作者。先后主持国家重点基础研究项目(973)、国家重点研发计划、国防基础研究项目、国家自然科学基金重点项目、国防预研基金等30余项,获国家技术发明奖2项、国家科学技术进步奖1项、省部级科技进步奖8项,发表论文500余篇,独著专著1本,合作专著2本,获得专利57项。2020年5月获得第二届全国创新争先奖。
基金资助:
国家自然科学基金(52072300);特色学科基础研究项目(G2022WD);西北工业大学深圳研究院,深圳虚拟大学园项目(2021Szvup110)

Research Progress on Indium Selenide Crystals and Optoelectronic Devices

ZHAO Qinghua^1,2, ZHENG Dan¹, CHEN Peng¹, WANG Tao^1,2, JIE Wanqi¹

1. Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072, China;
2. Shenzhen Research Institute of Northwestern Polytechnical University, Shenzhen 518063, China

Received:2022-07-27 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： 自2004年发现石墨烯以来,二维材料以其丰富的带隙结构、独特的光电特性和无悬挂键的范德瓦耳斯表面等,极大地拓宽了半导体电子、光电子器件的设计维度。其中二维硒化铟材料成为最具竞争力的未来高迁移率光电子器件用候选材料,被诺贝尔奖获得者Andre Geim认为是“硅和石墨烯的‘黄金分割点’”。但人们对二维硒化铟材料的研究仅有不到十年的时间,对其制备及应用的认识仍然不足。本文综述了二维硒化铟材料及其光电器件的研究现状。另外,考虑到目前绝大多数二维硒化铟材料的研究是基于块状单晶体材料的机械剥离开始的,因此本文首先回顾了硒化铟晶体结构的认识及其制备方法的发展历程,在此基础上综述了二维硒化铟材料制备及其性能表征的前沿研究结果,探讨了器件结构、材料制备方法等因素对二维硒化铟场效应晶体管和光探测器电学输运特性的影响,最后分析了未来硒化铟材料及器件应用面临的机遇与挑战。

关键词: 二维材料, 硒化铟, 晶体生长, 场效应晶体管, 光探测器

Abstract: Since the discovery of graphene in 2004, the research and application of two-dimensional (2D) materials have received great attention and developed rapidly. Abundant band gap structures, unique optoelectronic properties, and van der Waals surfaces without dangling bonds greatly broaden the design dimensions of semiconducting electronics and optoelectronics. Among them, the two-dimensional indium selenide, as one of the most promising candidates for future high-mobility optoelectronic devices, it has been recognized as “the ‘golden middle’ between silicon and graphene” by Nobel Prize winner Andre Geim. However, the research on two-dimensional indium selenide material has only been less than ten years, and the understanding of crystals fabrication and device application is still insufficient. This work mostly focuses on the development of indium selenide materials and the research status of its electronic and optoelectronic devices. In addition, considering that the present research on 2D indium selenide are mostly based on mechanical exfoliation of InSe bulks, the development of the crystal structure characterization and crystals fabrication are traced in this paper, then the state-of-the-art on the preparation and performance characterization of two-dimensional indium selenide are further summarized, and the influence of device geometries, material fabrication method and other factors on the electrical transport performance of 2D indium selenide field effect transistors and photodetectors are further discussed, and ended with analysis of the opportunities and challenges for future indium selenide based applications.

Key words: two-dimensional material, indium selenide, crystal growth, field-effect transistor, photodetector

中图分类号:

O734

赵清华, 郑丹, 陈鹏, 王涛, 介万奇. 硒化铟材料的发展及其光电器件应用[J]. 人工晶体学报, 2022, 51(9-10): 1703-1721.

ZHAO Qinghua, ZHENG Dan, CHEN Peng, WANG Tao, JIE Wanqi. Research Progress on Indium Selenide Crystals and Optoelectronic Devices[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1703-1721.

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