高温高压与CVD金刚石单晶衬底质量对比研究

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (9-10): 1777-1784.

高温高压与CVD金刚石单晶衬底质量对比研究

杨旖秋^1,2, 韩晓桐², 胡秀飞^1,2, 李斌^1,2, 彭燕^1,2, 王希玮^1,2, 胡小波^1,2, 徐现刚^1,2, 王笃福³, 刘长江³, 冯志红^{4, 5}

1.山东大学新一代半导体材料研究院,济南 250100;
2.山东大学晶体材料国家重点实验室,济南 250100;
3.济南金刚石科技有限公司,济南 250100;
4.专用集成电路国家级重点实验室,石家庄 050051;
5.中国电子科技集团公司第十三研究所,石家庄 050051

收稿日期:2022-04-26 出版日期:2022-10-15 发布日期:2022-11-02
通信作者: 彭燕,博士,副教授。E-mail:pengyan@sdu.edu.cn
王希玮,博士。E-mail:wangxiwei@sdu.edu.cn
冯志红,博士,研究员。 E-mail:ga917vv@163.com
作者简介:杨旖秋(1996—), 女,湖北省人,硕士研究生。E-mail:202014056@mail.sdu.edu.cn。
彭燕,山东大学新一代半导体材料研究院副教授,博士生导师。2011年6月毕业于山东大学晶体材料国家重点实验室,获理学博士学位。2017—2018年获得国家公派访问学者资助,于美国田纳西大学访学一年。入选2022年 “仲英青年学者”奖励计划。主要从事宽禁带半导体材料研究工作,重点研究SiC、金刚石材料及器件的制备、表征及应用研究。先后主持、参与国家基础研究计划、973计划、核高基及自然科学基金项目等10余项,发表SCI论文40余篇,申请/授权专利近30项。
王希玮,山东大学新一代半导体材料研究院博士后,2020年毕业于山东大学晶体材料国家重点实验室,获理学博士学位。主要从事宽禁带半导体材料研究应用工作,重点研究金刚石材料在半导体领域的制备、加工与应用。
冯志红,中国电子科技集团有限公司首席科学家,研究员,博士毕业于香港科技大学电机与电子工程专业,中国电子科学研究院博士生导师,专用集成电路国家级重点实验室常务副主任,国家百千万人才工程人选,国家有突出贡献中青年专家,国际电工技术标准委员会专家,中国电子材料行业协会理事。研究方向涉及宽禁带半导体、碳电子和固态太赫兹电子技术。
基金资助:
山东省重大科技创新工程项目(2019JZZY010210);晶体材料国家重点实验室自主课题;国防科技重点实验室基金项目;山东省重大科技创新工程项目(2022CXGC010103)

Comparative Study on the Quality of HTHP and CVD Single Crystal Diamond Substrates

YANG Yiqiu^1,2, HAN Xiaotong², HU Xiufei^1,2, LI Bin^1,2, PENG Yan^1,2, WANG Xiwei^1,2, HU Xiaobo^1,2, XU Xiangang^1,2, WANG Dufu³, LIU Changjiang³, FENG Zhihong^4,5

1. Institute of Novel Semiconductors, Shandong University, Jinan 250100, China;
2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
3. Jinan Diamond Technology Co., Ltd., Jinan 250100, China;
4. National Key Laboratory of Application Specific Integrated Circuit, Shijiazhuang 050051, China;
5. The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China

Received:2022-04-26 Online:2022-10-15 Published:2022-11-02

摘要/Abstract

摘要： 本文通过高分辨X射线衍射(HRXRD)、激光拉曼光谱(Raman)、晶格畸变检测等测试分析方法对多组高温高压(HTHP) Ⅰb、HTHP Ⅱa和化学气相沉积(CVD)型(100)面金刚石单晶样品进行对比研究。HRXRD和Raman的检测结果均表明HTHP Ⅱa型金刚石单晶的结晶质量接近天然金刚石,其XRD摇摆曲线半峰全宽和Raman半峰全宽分别为0.015°~0.018° 和1.45~1.85 cm^-1。晶格畸变检测仪的检测结果表明,HTHP Ⅱa型金刚石单晶的应力分布主要有两种:一种几乎无明显应力分布,另一种沿<110>方向呈对称的放射状分布,其他区域无晶格畸变。HTHP Ⅰb和CVD型金刚石单晶应力分布均相对分散,晶格畸变复杂,与其HRXRD和Raman的检测结果相符。进一步利用等离子体刻蚀法对三种类型金刚石单晶(100)面位错缺陷进行对比分析,结果表明,HTHP Ⅱa型金刚石位错密度为三者中最低,仅为1×10³ cm^-2。本研究为制备高质量大尺寸CVD金刚石单晶的衬底选择提供了实验依据。

关键词: HTHP Ⅱa金刚石, HTHP Ⅰb金刚石, CVD金刚石, 结晶质量, 应力, 等离子体刻蚀, 位错密度

Abstract: The comparative study of high temperature and high pressure (HTHP) and chemical vapor deposition (CVD) single crystal diamonds was carried out. HTHP Ⅰb, HTHP Ⅱa, and CVD (100) single crystal diamonds were investigated by HRXRD, Raman and lattice distortion detector. The results of HRXRD and Raman demonstrate that the crystal quality of HTHP Ⅱa single crystal diamond is close to that of natural diamond. The full width at half maximum of rocking curve and Raman are respectively 0.015° to 0.018° and 1.45 cm^-1 to 1.85 cm^-1. The optical birefringence images measured by lattice distortion detector show that there are two kinds of stress-induced birefringence distribution in HTHP Ⅱa single crystal diamond, one is not obvious, the other is symmetrically radiated along the direction of <110>, and there is no lattice distortion in other regions. The strain structures of HTHP Ⅰb and CVD (100) single crystal diamond are relatively dispersed with complex lattice distortion. Furthermore, the defects of (100) plane of three types of single crystal diamond were analyzed by plasma etching method. The results show that the dislocation density of HTHP Ⅱa diamond is the lowest among the three types, which is only 1×10³ cm^-2. The research work provides experiment support for selecting the substrate to prepare high-quality and large-size CVD single crystal diamond.

Key words: HTHP Ⅱa diamond, HTHP Ⅰb diamond, CVD diamond, crystal quality, stress, plasma etching, dislocation density

中图分类号:

P619.24⁺1

杨旖秋, 韩晓桐, 胡秀飞, 李斌, 彭燕, 王希玮, 胡小波, 徐现刚, 王笃福, 刘长江, 冯志红. 高温高压与CVD金刚石单晶衬底质量对比研究[J]. 人工晶体学报, 2022, 51(9-10): 1777-1784.

YANG Yiqiu, HAN Xiaotong, HU Xiufei, LI Bin, PENG Yan, WANG Xiwei, HU Xiaobo, XU Xiangang, WANG Dufu, LIU Changjiang, FENG Zhihong. Comparative Study on the Quality of HTHP and CVD Single Crystal Diamond Substrates[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(9-10): 1777-1784.

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