基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

人工晶体学报 ›› 2022, Vol. 51 ›› Issue (11): 1903-1910.

基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜

谢颖^1,2, 韩磊¹, 张志坤², 汪伟², 刘兆平²

1.宁波大学材料科学与化学工程学院,宁波 315211;
2.中国科学院宁波材料技术与工程研究所,石墨烯工程实验室,宁波 315201

收稿日期:2022-06-15 出版日期:2022-11-15 发布日期:2022-12-07
通讯作者: 刘兆平,博士,研究员。E-mail:liuzp@nimte.ac.cn
作者简介:谢颖(1997—),女,江西省人,硕士研究生。E-mail:xieying@nimte.ac.cn
基金资助:
国家自然科学基金(51702005);宁波市科技创新2025重大项目(2019B10097)

High Flatness Single Layer Graphene Film Grown on Thermal Evaporation Cu Foils Based on Polished Substrate

XIE Ying^1,2, HAN Lei¹, ZHANG Zhikun², WANG Wei², LIU Zhaoping²

1. School of Material Science and Chemical Engineering, Ningbo University, Ningbo 315211, China;
2. Graphene Engineering Laboratory, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

Received:2022-06-15 Online:2022-11-15 Published:2022-12-07

摘要/Abstract

摘要： 在石墨烯的化学气相沉积工艺中,铜箔是决定石墨烯薄膜质量的重要因素。传统铜箔由于制备工艺的限制,存在大量的缺陷,导致石墨烯薄膜的成核密度较高。本工作选用抛光铝板、抛光不锈钢板、微晶玻璃和SiO₂/Si作为基材,用热蒸镀法制备了不同粗糙度的铜箔,并详细讨论了以该系列铜箔生长高平整度石墨烯薄膜的条件及铜箔对石墨烯薄膜品质的影响。实验结果表明,铜箔以(111)取向为主,与基材分离后,表面具有纳米级平整度。在生长石墨烯后,从SiO₂/Si剥离的铜箔成核密度是4种基材中最小的。同时,从SiO₂/Si剥离的铜箔晶体结构变化最不明显,具有良好的结晶性,表面几乎不存在铜晶界缺陷。当压强为3 000 Pa,氢气和甲烷流速分别为300 mL/min和0.5 mL/min时,可以获得约1 mm横向尺寸的石墨烯单晶晶畴。

关键词: 石墨烯薄膜, 高平整度, 抛光基材, 热蒸镀, SiO₂/Si基材, 铜箔, 成核密度

Abstract: Cu foils play an important role in preparing high quality of graphene films by chemical vapor deposition. For the commonly used commercial Cu foil, the nucleation density of graphene is high due to the associated defects in the manufacturing process of Cu foil. In this work, different substrates containing polished aluminum plate, polished stainless steel plate, glass ceramics, and SiO₂/Si were selected as substrates to prepare distinct Cu foils with different roughness by thermal evaporation method. Then the growth conditions of high flatness graphene films and the effect of Cu foils on graphene films were discussed in detail. The results show that Cu foils are predominantly (111) orientation, and keep the surface with nanometer-level flatness after separation from substrates. After the growth of graphene, the nucleation density of Cu foil peeled from SiO₂/Si is the lowest among these four kinds of substrates. At the same time, its crystal structure has almost no change and has good crystallinity. There are nearly no Cu grain boundary defects on the surface of the Cu foil peeled from SiO₂/Si. When the pressure is 3 000 Pa and the flow rates of hydrogen and methane are 300 mL/min and 0.5 mL/min, respectively, a graphene single crystal domain with a lateral dimension of about 1 mm can be obtained.

Key words: graphene film, high flatness, polished substrate, thermal evaporation, SiO₂/Si substrate, Cu foil, nucleation density

中图分类号:

TQ127.1⁺1

谢颖, 韩磊, 张志坤, 汪伟, 刘兆平. 基于抛光基材的热蒸镀铜箔生长高平整单层石墨烯薄膜[J]. 人工晶体学报, 2022, 51(11): 1903-1910.

XIE Ying, HAN Lei, ZHANG Zhikun, WANG Wei, LIU Zhaoping. High Flatness Single Layer Graphene Film Grown on Thermal Evaporation Cu Foils Based on Polished Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2022, 51(11): 1903-1910.

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