引入Si掺杂层调控InGaAs/GaAs表面量子点的光学特性

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (1): 73-82.

引入Si掺杂层调控InGaAs/GaAs表面量子点的光学特性

刘晓辉, 刘景涛, 郭颖楠, 王颖, 郭庆林, 梁宝来, 王淑芳, 傅广生

河北大学物理科学与技术学院,保定 071002

收稿日期:2022-09-02 出版日期:2023-01-15 发布日期:2023-02-15
通信作者: 郭颖楠,博士,讲师。E-mail:guoyn@hbu.edu.cn;王颖,博士,副教授。E-mail:hbuwangying@hbu.edu.cn;梁宝来,博士,教授。E-mail:liangbaolai@hbu.edu.cn
作者简介:刘晓辉(1997—),男,山东省人,硕士研究生。E-mail:hui123zuibang@126.com
基金资助:
国家自然科学基金(61774053);河北省自然科学基金(F2019201446,F2020201051);河北大学高层次人才项目(8012605)

Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer

LIU Xiaohui, LIU Jingtao, GUO Yingnan, WANG Ying, GUO Qinglin, LIANG Baolai, WANG Shufang, FU Guangsheng

College of Physics Science and Technology, Hebei University, Baoding 071002, China

Received:2022-09-02 Online:2023-01-15 Published:2023-02-15

摘要/Abstract

摘要： 在InGaAs/GaAs表面量子点(SQDs)的GaAs势垒层中引入Si掺杂层,以研究Si掺杂对InGaAs/GaAs SQDs光学特性的影响。荧光发光谱(PL)测量结果显示,InGaAs/GaAs SQDs的发光强烈依赖于Si掺杂浓度。随着掺杂浓度的增加, SQDs的PL峰值位置先红移后蓝移; PL峰值能量与激光激发强度的立方根依赖关系由线性向非线性转变;通过组态交互作用方法发现SQDs的PL峰位蓝移减弱;时间分辨荧光光谱显示了从非线性衰减到线性衰减的转变。以上结果说明Si掺杂能够填充InGaAs SQDs的表面态,并且改变表面费米能级钉扎效应和SQDs的荧光辐射特性。本研究为深入理解与InGaAs SQDs的表面敏感特性关联的物理机制和载流子动力学过程,以及扩大InGaAs/GaAs SQDs传感器的应用提供了实验依据。

关键词: InGaAs量子点, Si掺杂, 表面费米能级, 荧光发光谱, 间接跃迁辐射, 时间分辨荧光光谱

Abstract: A Si doped interlayer was introduced into the GaAs barrier layer to study optical properties of InGaAs/GaAs surface quantum dots (SQDs). Photoluminescence (PL) measurements show that luminescence of InGaAs/GaAs SQDs is strongly dependent on Si doping concentration. With increasing the Si doping concentration, InGaAs/GaAs SQDs show clearly different luminescence characteristics, including: PL peak position of SQDs shifts to red at first and then to blue; the dependence of PL peak energy on the cubic root of excitation intensity changes from linear to nonlinear; configuration interaction method shows reduced blue shift for PL band; time-resolved PL indicates a transition from nonlinear decay of type-II QDs to linear decay of type-I QDs. These experimental results indicate that Si doping fill the surface states and modify the surface Fermi level pinning effect, thus changing the luminescence characteristics of InGaAs/GaAs SQDs. This research provides a support for understanding and tailing the surface-sensitive characteristics of InGaAs SQDs for development of sensors.

Key words: InGaAs quantum dot, Si doping, surface Fermi level, photoluminescence, indirect-transition emission, time-resolved photoluminescence

中图分类号:

TN304

刘晓辉, 刘景涛, 郭颖楠, 王颖, 郭庆林, 梁宝来, 王淑芳, 傅广生. 引入Si掺杂层调控InGaAs/GaAs表面量子点的光学特性[J]. 人工晶体学报, 2023, 52(1): 73-82.

LIU Xiaohui, LIU Jingtao, GUO Yingnan, WANG Ying, GUO Qinglin, LIANG Baolai, WANG Shufang, FU Guangsheng. Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(1): 73-82.

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