Si衬底上外延生长GaN基射频电子材料的研究进展

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 723-731.

Si衬底上外延生长GaN基射频电子材料的研究进展

杨学林^1,2,3, 沈波^1,2,3,4

1.北京大学宽禁带半导体研究中心,北京 100871;
2.北京大学人工微结构和介观物理国家重点实验室,北京 100871;
3.教育部纳光电子前沿科学中心,北京 100871;
4.量子物质科学协同创新中心,北京 100871

收稿日期:2023-03-29 出版日期:2023-05-15 发布日期:2023-06-05
通信作者: 沈波,博士,教授。E-mail:bshen@pku.edu.cn
作者简介:杨学林(1981—),男,辽宁省人,博士,教授级高工。E-mail:xlyang@pku.edu.cn
基金资助:
国家重点研发计划(2021YFB3602400,2022YFB3604400);国家自然科学基金(62234002,61927806);广东省重点研发计划(2020B010171002)

Epitaxial Growth of GaN Based RF Electronic Materials on Si Substrates

YANG Xuelin^1,2,3, SHEN Bo^1,2,3,4

1. Research Center for Wide Gap Semiconductors, Peking University, Beijing 100871, China;
2. State Key Laboratory of Artificial Microstructure and Microscopic Physics, Peking University, Beijing 100871, China;
3. Nano-Optoelectronics Frontier Center of Ministry of Education, Beijing 100871, China;
4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Received:2023-03-29 Online:2023-05-15 Published:2023-06-05

摘要/Abstract

摘要： Si衬底因兼具大尺寸、低成本以及与现有CMOS工艺兼容等优势,使Si衬底上GaN基射频(RF)电子材料和器件成为继功率电子器件之后下一个该领域关注的焦点。由于力学性质与低阻Si衬底不同,高阻Si衬底上GaN基外延材料生长的应力控制和位错抑制问题仍然困难,且严重的射频损耗问题限制着其在射频电子领域的应用。本文简要介绍了Si衬底上GaN基射频电子材料的研究现状和面临的挑战,重点介绍了北京大学研究团队在高阻Si衬底上GaN基材料射频损耗的产生机理,以及低位错密度、低射频损耗GaN的外延生长等方面的主要研究进展。最后对Si衬底上GaN基射频电子材料和器件的未来发展作了展望。

关键词: Si衬底上GaN, 金属有机化合物化学气相沉积, 应力, 位错, 射频损耗

Abstract: Due to the advantages of both large size, low cost, and compatibility with existing CMOS processes, GaN based ratio frequency (RF) electronic materials and devices on Si substrates have become the next focus of attention in this field after power electronic devices. Due to the different mechanical properties of high-resistivity Si substrates, it is still difficult to control stress and suppress dislocations in the growth of GaN based epitaxial materials on high-resistivity Si substrates, as well as address serious RF loss issues that limit their applications in the field of RF electronics. This work briefly introduces the research status and challenges of GaN based RF electronic materials on Si substrates, focusing on the main research progress of the Peking University research team in the formation mechanism of RF loss, epitaxial growth of GaN on high-resistivity Si substrates with low dislocation density and low RF loss. Finally, the future development of GaN based RF electronic materials and devices on Si substrates is prospected.

Key words: GaN-on-Si, MOCVD, stress, dislocation, RF loss

中图分类号:

O484.1

杨学林, 沈波. Si衬底上外延生长GaN基射频电子材料的研究进展[J]. 人工晶体学报, 2023, 52(5): 723-731.

YANG Xuelin, SHEN Bo. Epitaxial Growth of GaN Based RF Electronic Materials on Si Substrates[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 723-731.

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