高成品率和平整度的GaN基Micro LED芯片激光剥离工艺的研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 805-811.

高成品率和平整度的GaN基Micro LED芯片激光剥离工艺的研究

岳龙^1,2, 徐俞^2,3, 王建峰^2,3,4, 徐科^2,3,4

1.中国科学技术大学纳米科学技术学院,苏州 215123;
2.中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123;
3.苏州纳维科技有限公司,苏州 215000;
4.沈阳材料科学国家研究中心, 沈阳 110010

收稿日期:2023-02-20 出版日期:2023-05-15 发布日期:2023-06-05
通信作者: 徐俞,博士,副研究员。E-mail:yxu2007@sinano.ac.cn;王建峰,博士,研究员。E-mail:jfwang2006@sinano.ac.cn;徐科,博士,研究员。E-mail:kxu2006@sinano.ac.cn
作者简介:岳龙(1997—),男,安徽省人,硕士研究生。E-mail:lyue2024@gmail.com
基金资助:
国家自然科学基金面上项目(62174173)

Laser Lift-Off Process of GaN-Based Micro LED Chip with High Yield and Flatness

YUE Long^1,2, XU Yu^2,3, WANG Jianfeng^2,3,4, XU Ke^2,3,4

1. Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China;
2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy Sciences, Suzhou 215123, China;
3. Suzhou Nanowin Science and Technology Company, Suzhou 215000, China;
4. Shenyang National Laboratory for Materials Science, Shenyang 110010, China

Received:2023-02-20 Online:2023-05-15 Published:2023-06-05

摘要/Abstract

摘要： 使用波长248 nm的准分子激光器实现了GaN基微型发光二极管(Micro LED)的大面积激光剥离(LLO)。分离器件所需要的临界激光能量密度为800~835 mJ·cm^-2,分离的器件完好无损,分离表面光滑,残余应力为0.071 4 GPa,均方根粗糙度仅为0.597 nm,远低于目前报道的LLO方法分离表面。该研究为实现高质量、高效率的GaN基Micro LED芯片的制备提供了一种有前景的思路,对柔性GaN基器件的制备具有一定意义。

关键词: GaN, 微型发光二极管, 激光剥离, 准分子激光器, 成品率, 平整度

Abstract: In this study, a large area laser lift-off (LLO) of GaN-based micro light-emitting diodes (Micro LED) was achieved using an excimer laser at 248 nm. The critical laser energy density required for separation of devices is 800~835 mJ·cm^-2. The separated device is intact with a residual stress of 0.071 4 GPa and a mean square roughness of 0.597 nm, which is much lower than that of the LLO method reported so far. This study provides a promising idea for the fabrication of GaN-based Micro LED chips with high quality and high efficiency, which is of great significance for the fabrication of flexible GaN-based devices.

Key words: gallium nitride, micro light-emitting diode, laser lift-off, excimer laser, production yield, flatness

中图分类号:

TN364

岳龙, 徐俞, 王建峰, 徐科. 高成品率和平整度的GaN基Micro LED芯片激光剥离工艺的研究[J]. 人工晶体学报, 2023, 52(5): 805-811.

YUE Long, XU Yu, WANG Jianfeng, XU Ke. Laser Lift-Off Process of GaN-Based Micro LED Chip with High Yield and Flatness[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 805-811.

参考文献

[1] DAY J, LI J, LIE D Y C, et al. III-Nitride full-scale high-resolution microdisplays[J]. Applied Physics Letters, 2011, 99(3): 031116.
[2] JIN D U, LEE J S, KIM T W, et al. 65.2: distinguished paper: world-largest (6.5″) flexible full color top emission AMOLED display on plastic film and its bending properties[J]. SID Symposium Digest of Technical Papers, 2009, 40(1): 983-985.
[3] LI L Z, LIU C B, SU Y Z, et al. Micro-LEDs: heterogeneous integration of microscale GaN light-emitting diodes and their electrical, optical, and thermal characteristics on flexible substrates[J]. Advanced Materials Technologies, 2018, 3(1): 1870005.
[4] CHEN C J, CHEN H C, LIAO J H, et al. Fabrication and characterization of active-matrix 960×540 blue GaN-based micro-LED display[J]. IEEE Journal of Quantum Electronics, 2019, 55(2): 1-6.
[5] WU T Z, SHER C W, LIN Y, et al. Mini-LED and micro-LED: promising candidates for the next generation display technology[J]. Applied Sciences, 2018, 8(9): 1557.
[6] LEE H E, LEE D, LEE T I, et al. Wireless powered wearable micro light-emitting diodes[J]. Nano Energy, 2019, 55: 454-462.
[7] LAN H Y, TSENG I C, LIN Y H, et al. High-speed integrated micro-LED array for visible light communication[J]. Optics Letters, 2020, 45(8): 2203-2206.
[8] LIN J Y, JIANG H X. Development of microLED[J]. Applied Physics Letters, 2020, 116(10): 100502.
[9] HORNG R H, CHIANG C C, HSIAO H Y, et al. Improved thermal management of GaN/sapphire light-emitting diodes embedded in reflective heat spreaders[J]. Applied Physics Letters, 2008, 93(11): 111907.
[10] MAY B J, SARWAR A T M G, MYERS R C. Nanowire LEDs grown directly on flexible metal foil[J]. Applied Physics Letters, 2016, 108(14): 141103.
[11] YULIANTO N, KADJA G T M, BORNEMANN S, et al. Ultrashort pulse laser lift-off processing of InGaN/GaN light-emitting diode chips[J]. ACS Applied Electronic Materials, 2021, 3(2): 778-788.
[12] CHEN Y, XIE B, LONG J Y, et al. Interfacial laser-induced graphene enabling high-performance liquid-solid triboelectric nanogenerator[J]. Advanced Materials, 2021, 33(44): 2104290.
[13] LIU L, EDGAR J H. Substrates for gallium nitride epitaxy[J]. Materials Science and Engineering: R: Reports, 2002, 37(3): 61-127.
[14] YULIANTO N, REFINO A D, SYRING A, et al. Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique[J]. Microsystems & Nanoengineering, 2021, 7(1): 1-15.
[15] PARK J, SIN Y G, KIM J H, et al. Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation[J]. Applied Surface Science, 2016, 384: 353-359.
[16] SUN W G, JI L F, LIN Z Y, et al. Low-energy UV ultrafast laser controlled lift-off for high-quality flexible GaN-based device[J]. Advanced Functional Materials, 2022, 32(8): 2111920.
[17] ZHOU H, XU Y, CHEN X W, et al. Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene[J]. Journal of Alloys and Compounds, 2020, 844: 155870.
[18] ZHU Y H, WANG M Y, SHI M, et al. Correlation on GaN epilayer quality and strain in GaN-based LEDs grown on 4-in. Si(111) substrate[J]. Superlattices and Microstructures, 2015, 85: 798-805.
[19] DOAN M H, KIM S, LEE J J, et al. Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes[J]. AIP Advances, 2012, 2(2): 022122.
[20] LEI Y, WAN H, TANG B, et al. Optical characterization of GaN-based vertical blue light-emitting diodes on p-type silicon substrate[J]. Crystals, 2020, 10(7): 621.