枝晶WS2/单层WS2薄膜的CVD可控制备与表征

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (5): 909-917.

枝晶WS₂/单层WS₂薄膜的CVD可控制备与表征

张鑫^1,2, 沈俊², 湛立^2,3, 崔恒清², 葛炳辉⁴, 武传强⁴

1.重庆交通大学材料科学与工程学院,重庆 400714;
2.中国科学院重庆绿色智能技术研究院,重庆 400714;
3.南京大学电子科学与工程学院,固体微结构物理国家重点实验室,南京 210023;
4.安徽大学物理科学与信息技术研究所,混合材料结构与功能调控教育部重点实验室,合肥 230601

收稿日期:2023-02-15 出版日期:2023-05-15 发布日期:2023-06-05
通信作者: 沈俊,博士,副研究员。E-mail: juns@cigit.ac.cn
作者简介:张鑫(1996—),男,甘肃省人,硕士研究生。E-mail:zhangxin201@mails.ucas.ac.cn
基金资助:
中国科学院科技服务网络行动(KFJ-STS-QYZD-179;KFJ-STS-QYZD-123);商业研究基金(Y79H030)

Controllable Preparation and Characterization of Dendritic WS₂/Monolayer WS₂ Grown by CVD

ZHANG Xin^1,2, SHEN Jun², ZHAN Li^2,3, CUI Hengqing², GE Binghui⁴, WU Chuanqiang⁴

1. School of Materials Science and Engineering, Chongqing Jiaotong University, Chongqing 400714, China;
2. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China;
3. National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
4. Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

Received:2023-02-15 Online:2023-05-15 Published:2023-06-05

摘要/Abstract

摘要： 二硫化钨(WS₂)由于具有可调的带隙、强的光-物质相互作用、较高的载流子迁移率等性质,在光电子器件领域具有较为广泛的应用。本文通过常压化学气相沉积(CVD)法,以硫粉和过渡金属氧化物为前驱体,在SiO₂/Si上生长了枝晶WS₂/单层WS₂同质结。在衬底上将样品的形貌演化分为了4个区域:叠加生长区(Ⅳ)、树枝状WS₂生长区(Ⅲ)、六角状WS₂生长区(Ⅱ)和无明显形貌区(Ⅰ)。采用光学显微镜、原子力显微镜、拉曼光谱、光致发光光谱、透射电子显微镜、扫描电子显微镜等测试手段系统比较了所制备枝晶WS₂/单层WS₂在衬底上数量、形貌、结构和性质的不同。研究发现枝晶WS₂形貌的不同影响了实际缺陷浓度,从而影响了拉曼特征峰位置。利用原子吸附模型和S、W蒸气比的变化解释了形貌演化的生长机理。此外,基于枝晶WS₂/单层WS₂制备的背栅式场效应晶体管(FET)光响应率为46.6 mA/W,响应时间和恢复时间达到了微秒级别,性能优于大多数CVD法制备的单层WS₂背栅式场效应晶体管(WS₂-FET)。这一工作有助于进一步加强对二维薄膜材料可控生长的理解,对制备大面积、高质量的枝晶型结构具有一定参考价值。

关键词: WS₂, 化学气相沉积, 同质结, 形貌演化, 生长机理, 场效应晶体管

Abstract: Tungsten disulfide (WS₂) has a wide application prospect in the field of optoelectronic devices due to its properties such as tunable band gap, strong light-matter interaction and high carrier mobility and so on. Dendritic WS₂/monolayer WS₂ was grown on SiO₂/Si substrate by atmospheric pressure chemical vapor deposition (CVD). Sulphur powder and transition metal oxides were used as precursors. The morphological evolution of the samples on the substrate was divided into four regions: superimposed growth region (Ⅳ), dendritic WS₂ growth region (Ⅲ), hexagonal WS₂ growth region (Ⅱ) and no obvious morphological region (Ⅰ). The differences in the number, morphology, structure and properties of the prepared dendritic WS₂/monolayer WS₂ on the substrates were systematically compared by optical microscopy, atomic force microscopy, Raman spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, scanning electron microscopy and other testing methods. It is found that the morphology of the dendritic WS₂ affects the actual defect concentration, thus affects the position of the Raman characteristic peaks. The growth mechanism of the morphological evolution was explained by the atomic adsorption model and the variation of the S and W vapor ratio. In addition, back-gated field effect transistor (FET) based on dendritic WS₂/monolayer WS₂ homojunction with a responsivity of 46.6 mA/W is prepared, and its response and recovery time are in the microsecond range, showing its superior performances than the monolayer WS₂-FET prepared by CVD. This work will help to further understand the controlled growth of two-dimensional thin film materials and contribute to the preparation of large-area, high-quality dendrite structures.

Key words: WS₂, CVD, homojunction, morphological evolution, growth mechanism, FET

中图分类号:

O734
O484

张鑫, 沈俊, 湛立, 崔恒清, 葛炳辉, 武传强. 枝晶WS₂/单层WS₂薄膜的CVD可控制备与表征[J]. 人工晶体学报, 2023, 52(5): 909-917.

ZHANG Xin, SHEN Jun, ZHAN Li, CUI Hengqing, GE Binghui, WU Chuanqiang. Controllable Preparation and Characterization of Dendritic WS₂/Monolayer WS₂ Grown by CVD[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 909-917.

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枝晶WS₂/单层WS₂薄膜的CVD可控制备与表征

Controllable Preparation and Characterization of Dendritic WS₂/Monolayer WS₂ Grown by CVD

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