[1] VLASKINA S I. 3C-6H transformation in heated cubic silicon carbide 3C-SiC[J]. Semiconductor Physics Quantum Electronics and Optoelectronics, 2011, 14(4): 432-436. [2] VLASKINA S I, BUSINKAA@MAIL RU E M. Silicon carbide phase transition in as-grown 3C-6H polytypes junction[J]. Semiconductor Physics Quantum Electronics and Optoelectronics, 2013, 16(2): 132-135. [3] PARISH C M, KOYANAGI T, KONDO S, et al. Irradiation-induced β to α SiC transformation at low temperature[J]. Scientific Reports, 2017, 7: 1198. [4] ZHU B, ZHAO D, ZHAO H W. A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation[J]. Ceramics International, 2019, 45(4): 5150-5157. [5] YANG J W, PIROUZ P. The α → β polytypic transformation in high-temperature indented SiC[J]. Journal of Materials Research, 1993, 8(11): 2902-2907. [6] SHI H J, CHAI Y D, LI N, et al. Interfacial reaction mechanism of SiC joints joined by pure nickel foil[J]. Journal of the European Ceramic Society, 2020, 40(15): 5162-5171. [7] GUZMÁN DE VILLORIA R, MIRAVETE A. Mechanical model to evaluate the effect of the dispersion in nanocomposites[J]. Acta Materialia, 2007, 55(9): 3025-3031. [8] SENGUPTA P, SAHOO S S, BHATTACHARJEE A, et al. Effect of TiC addition on structure and properties of spark plasma sintered ZrB2-SiC-TiC ultrahigh temperature ceramic composite[J]. Journal of Alloys and Compounds, 2021, 850: 156668. [9] ZHAO Y H, HOU H, ZHAO Y H, et al. First-principles study of the nickel-silicon binary compounds under pressure[J]. Journal of Alloys and Compounds, 2015, 640: 233-239. [10] GEENEN F A, KNAEPEN W, MOENS F, et al. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides[J]. Journal of Physics D: Applied Physics, 2016, 49(27): 275307. [11] KIEWEL H, BUNGE H J, FRITSCHE L. Effect of orientation correlation on the elastic constants of polycrystalline materials[J]. Textures and Microstructures, 1996, 28(1/2): 105-120. [12] KELLY B T, WALKER P L. Theory of thermal expansion of a graphite crystal in the semi-continuum model[J]. Carbon, 1970, 8(2): 211-226. [13] JEPPS N W, PAGE T F. Polytypic transformations in silicon carbide[J]. Progress in Crystal Growth and Characterization, 1983, 7(1/2/3/4): 259-307. [14] WHITNEY E D, SHAFFER P T B. Investigation of the phase transformation between alpha- and beta-silicon carbide at high pressures[J]. High Temperatures-High Pressures, 1969,1(1):107-110. [15] SOKHOR M I, KONDAKOV V G, FELDGUN L I. Transition of silicon carbide from the hexagonal to the cubic phase under the influence of high pressures and high temperatures[J]. Soviet Physics Doklady, 1967, 175(4): 826. [16] MEDVEDEVA N I, YURYEVA É I, IVANOVSKII A L. Titanium, vanadium, and nickel impurities in 3C-SiC: electronic structure and lattice relaxation effects[J]. Semiconductors, 2002, 36(7): 751-754. [17] YURYEVA E I, IVANOVSKII A L. Electronic structure and chemical bonding of nickel impurities in cubic silicon carbide[J]. Russian Journal of Coordination Chemistry, 2002, 28(12): 881-888. |