As40Se60硫系玻璃基底薄膜制备与应力分析

摘要/Abstract

摘要： 硫系玻璃是一类优秀的红外光学镜片材料,但其热膨胀系数较大,与Si、Ge等红外光学材料相比,硫系玻璃镜片在镀膜过程中产生的残余应力较大,镀膜后面形变化较大。研究膜层中应力并优化应力的控制方法,可以提高薄膜的力学性能。本文通过测量在As₄₀Se₆₀硫系玻璃上镀膜前后基底的变化量来研究基底上不同材料膜层的残余应力情况,同时使用ANSYS软件对As₄₀Se₆₀/ZnS/Ge/ZnS/Ge/ZnS/YbF₃/ZnS红外光学镜片膜系结构的热应力进行理论计算与仿真,验证了模型的合理性。分析了膜系结构中热应力在轴向与径向分布情况,结果显示:轴向热应力主要集中在膜层部分,表面膜层的热应力最大;径向热应力呈均匀分布,在边缘发生突降。分析了最外层保护膜的热应力与沉积温度、相邻膜层、不相邻膜层和基底的关系,结果表明:沉积温度在110 ℃到200 ℃的范围内,保护膜的热应力与沉积温度成正比;相邻膜层和不相邻膜层的厚度和材料均不影响保护膜的热应力;基底的厚度会对保护膜的热应力产生影响。

关键词: 硫系玻璃基底, As₄₀Se₆₀, 膜层制备, 残余应力, 热应力, 有限元分析

Abstract: Chalcogenide glass is an excellent infrared optical lens material, but its thermal expansion coefficient is large. Compared with Si, Ge and other infrared optical materials, the chalcogenide glass lens produces larger residual stress in the coating process, and the shape changes after coating is large. The mechanical properties of the film can be improved by studying the stress in the film and optimizing the stress control method. In this paper, the residual stresses of different material coatings on the substrate were studied by measuring the variation of the substrate before and after coating on As₄₀Se₆₀ chalcogenide glass. At the same time, the thermal stress of As₄₀Se₆₀/ZnS/Ge/ZnS/Ge/ZnS/YbF₃/ZnS infrared optical lens film chalcogenide was calculated and simulated by ANSYS software, which verified the rationality of the model. The axial and radial distributions of thermal stress in the film structure were analyzed. The results show that the thermal stress of the film structure is mainly concentrated in the film in the axial direction, and the thermal stress of the surface film is the largest. In the radial direction, the thermal stress is evenly distributed and suddenly drops at the edge. The relationships between thermal stress of the outermost protective film and deposition temperature, adjacent film layer, non-adjacent film layer and substrate were analyzed. The results show that the thermal stress of the protective film is proportional to the deposition temperature in the range of 110 ℃ to 200 ℃. The thickness and material of adjacent and non-adjacent films do not affect the thermal stress of the protective film. The thickness of the base will affect the thermal stress of the protective film.

Key words: chalcogenide glass substrate, As₄₀Se₆₀, film preparation, residual stress, thermal stress, finite element analysis

中图分类号:

TB43

周慎敏, 张宇. As₄₀Se₆₀硫系玻璃基底薄膜制备与应力分析[J]. 人工晶体学报, 2023, 52(8): 1540-1547.

ZHOU Shenmin, ZHANG Yu. Preparation and Stress Analysis of As₄₀Se₆₀ Chalcogenide Glass Substrate Films[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(8): 1540-1547.

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As₄₀Se₆₀硫系玻璃基底薄膜制备与应力分析

Preparation and Stress Analysis of As₄₀Se₆₀ Chalcogenide Glass Substrate Films

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