斜切角对β-Ga2O3(100)面衬底加工的影响研究

人工晶体学报 ›› 2023, Vol. 52 ›› Issue (9): 1570-1575.

斜切角对β-Ga₂O₃(100)面衬底加工的影响研究

李信儒¹, 侯童¹, 马旭¹, 王佩¹, 李阳¹, 穆文祥¹, 贾志泰^1,2, 陶绪堂¹

1.山东大学,新一代半导体材料研究院,晶体材料国家重点实验室,济南 250100;
2.山东工业技术研究院,济南 250100

收稿日期:2023-03-27 出版日期:2023-09-15 发布日期:2023-09-19
通信作者: 穆文祥,博士,副教授。E-mail:mwx@sdu.edu.cn
贾志泰,博士,教授。E-mail:z.jia@sdu.edu.cn
作者简介:李信儒(1996—),男,黑龙江省人,硕士研究生。E-mail:1052965637@qq.com
基金资助:
国家自然科学基金(52002219,51932004,61975098);广东省重点领域研发计划(2020B010174002);深圳市基础研究计划(JCYJ20210324132014038);111工程2.0(BP2018013)

Study on the Influence of Miscut-Angle on the Processing of β-Ga₂O₃ (100) Plane Substrate

LI Xinru¹, HOU Tong¹, MA Xu¹, WANG Pei¹, LI Yang¹, MU Wenxiang¹, JIA Zhitai^1,2, TAO Xutang¹

1. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China;
2. Shandong Research Institute of Industrial Technology, Jinan 250100, China

Received:2023-03-27 Online:2023-09-15 Published:2023-09-19

摘要/Abstract

摘要： 本文研究了斜切角的引入对β-Ga₂O₃(100)面衬底加工的影响,分析了斜切角分别为0°、1°、6°时,(100)面衬底在加工过程中的形貌变化及不同抛光参数对衬底抛光的影响。实验结果表明,随着斜切角的增大,(100)面衬底在加工过程中的解理损伤问题得以改善,加工后表面粗糙度降低,材料去除方式出现了脆性去除-脆塑性混合去除-塑性去除的转变。较小的抛光压力可以有效减少解理损伤,改善表面质量。斜切角为6°时的(100)面衬底抛光效率高,抛光后表面粗糙度可达到Ra≤0.2 nm。

关键词: β-Ga₂O₃, 解理, 斜切角, 抛光, 表面粗糙度

Abstract: In this paper, the influence of miscut-angle on the processing of β-Ga₂O₃ (100) plane substrates was studied. The morphology changes of (100) plane substrates during the processing were analyzed when the miscut-angles were 0°, 1° and 6°, respectively. Furthermore, the influence of different parameters on the polishing of the substrate was analyzed. The experimental results show that with the increase of the miscut-angle, the cleavage damage of (100) plane substrate reduces, the surface roughness reduces after machining, and the way of material removal transformed from brittle removal to brittle plastic mixed removal to plastic removal. Low polishing pressure can effectively suppress the cleavage damage and improve the surface quality. When the miscut-angle is 6°, the polishing efficiency of (100) plane substrate is high, and the surface roughness after polishing can reach Ra≤0.2 nm.

Key words: β-Ga₂O₃, cleavage, miscut-angle, polishing, surface roughness

中图分类号:

TQ133.5⁺1

李信儒, 侯童, 马旭, 王佩, 李阳, 穆文祥, 贾志泰, 陶绪堂. 斜切角对β-Ga₂O₃(100)面衬底加工的影响研究[J]. 人工晶体学报, 2023, 52(9): 1570-1575.

LI Xinru, HOU Tong, MA Xu, WANG Pei, LI Yang, MU Wenxiang, JIA Zhitai, TAO Xutang. Study on the Influence of Miscut-Angle on the Processing of β-Ga₂O₃ (100) Plane Substrate[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1570-1575.

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斜切角对β-Ga₂O₃(100)面衬底加工的影响研究

Study on the Influence of Miscut-Angle on the Processing of β-Ga₂O₃ (100) Plane Substrate

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