移动加热器法碲锌镉晶体生长系统热场研究

摘要/Abstract

摘要： 碲锌镉(Cd_1-xZn_xTe,简称CdZnTe或CZT)是一种在室温下工作的半导体核辐射探测材料,因其优越的光电特性近年来受到越来越多的关注,在医学成像、环境监测和空间探测领域的应用也愈发广泛。移动加热器法(THM)被认为是目前生长CZT单晶最有前景的方法之一。晶体生长过程中,合适的温场是获得优质晶体的前提条件。本文使用Fluent软件对电阻加热式THM生长CZT单晶生长系统展开热场研究,首先建立描述系统热输运的物理和数学模型,提出一种设立控温点的逆模拟方法解决了加热器功率并非既定值的模拟难点,设定功率分别为225.6、343.7、1 045.9、92.5、199.6 W的5个加热器情况下的炉内温场计算值与实验测量值有了较好的吻合。进而研究加热器与炉膛管距离、散热区宽度等炉膛结构对坩埚内CZT原料区温度分布的影响。研究结果表明,Canthal炉管与加热器间距离由5 mm增大至10、15 mm后,最高温度减小3.7％、5.6％,散热区宽度由30 mm增大至50、80 mm后,熔区宽度分别减小32.7％、50.0％。

关键词: 碲锌镉晶体, 移动加热器法, 半导体, 数值模拟, 热场, 炉膛结构

Abstract: Cadmium zinc telluride (Cd_1-xZn_xTe, referred to as CdZnTe or CZT) is a room-temperature nuclear radiation detection material, which is promising for use in the fields of medical imaging, environmental monitor and space exploration, due to its superior photoelectric properties. Traveling heater method (THM) is considered to be one of the most promising methods for growing CZT single crystals. During the crystal growth, a suitable temperature field is a prerequisite for obtaining high-quality crystals. In this paper, the Fluent software is used to study the thermal field of a resistance-heated THM growth system. A physical and mathematical model describing the thermal transport of the system is established, and an inverse simulation method for establishing temperature control points is proposed to solve the problems of the heaters’ power. The calculated values of the power of five heaters in the furnace are 225.6, 343.7, 1 045.9, 92.5 and 199.6 W respectively, which are in good agreement with the experimental measurements. Furthermore, the effects of furnace structures such as the distance between the heater and the heating tube, and the width of the heat-dissipation zone on the temperature distribution in the CZT zone in the crucible were studied. The research results show that the maximum temperature decreases by 3.7% and 5.6% when the distance between the heater and the heating tube increases from 5 mm to 10 and 15 mm, and the width of the melting zone decreases by 32.7% and 50.0% when the width of the heat-dissipation zone increases from 30 mm to 50 and 80 mm.

Key words: CdZnTe crystal, traveling heater method, semiconductor, numerical simulation, thermal field, furnace structure

中图分类号:

O782

徐哲人, 张继军, 曹祥智, 卢伟, 刘昊, 祁永武. 移动加热器法碲锌镉晶体生长系统热场研究[J]. 人工晶体学报, 2023, 52(9): 1589-1598.

XU Zheren, ZHANG Jijun, CAO Xiangzhi, LU Wei, LIU Hao, QI Yongwu. Study on Thermal Field of Growth System of CdZnTe Crystal Growth by Traveling Heater Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1589-1598.

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