Er掺杂MnBi2Te4晶体生长及其微结构研究

摘要/Abstract

摘要： MnBi₂Te₄是首次被发现的一种本征磁性拓扑绝缘体,具有重要的研究意义。本文通过在MnBi₂Te₄晶体中进行稀土元素掺杂,合成了Er掺杂MnBi₂Te₄晶体,Er原子进入晶格并取代Mn位。在晶体制备过程中,考虑到目前晶体制备工艺周期较长,生成物存在Bi₂Te₃助熔剂等杂质的问题,对晶体制备工艺进行了优化探索。XRD测试结果表明,利用改进工艺制备的Er掺杂MnBi₂Te₄晶体结晶性能良好,不含杂质相。磁电输运测量结果显示,少量Er掺杂MnBi₂Te₄晶体的磁性增强,掺杂样品在25.2 K发生反铁磁相变。使用原子力显微镜对Er掺杂MnBi₂Te₄晶体层间距进行了研究,发现层间距为单层MnBi₂Te₄的整数倍。通过拉曼测试研究了Er掺杂MnBi₂Te₄晶体声子振动模式,结果表明,Er掺杂是调节MnBi₂Te₄磁性的一种可行方法。

关键词: MnBi₂Te₄, 反铁磁拓扑绝缘体, Er掺杂, 结晶性, 磁性, 声子振动模式

Abstract: MnBi₂Te₄ is an intrinsic magnetic topological insulator discovered for the first time, which has important research significance. In this paper, Er-doped MnBi₂Te₄ crystal were synthesized by doping rare earth elements in MnBi₂Te₄ crystal. The Er atom enters the lattice and replaces the Mn site. Considering the long period of crystal preparation process and the existence of impurities such as Bi₂Te₃ flux in the product during crystal preparation, the crystal preparation process was optimized. XRD analysis shows that the Er-doped MnBi₂Te₄ crystal prepared by the optimized process has good crystallinity and no impurity phase. The magnetoelectric transport measurement results show that a small amount of Er-doped MnBi₂Te₄ crystal has enhanced magnetic properties, and the doped samples undergo antiferromagnetic phase transition at 25.2 K. The layer spacing of Er-doped MnBi₂Te₄ crystal was studied by atomic force microscopy. The layer spacing is an integral multiple of that of single-layer MnBi₂Te₄. The phonon vibration mode of Er-doped MnBi₂Te₄ crystal was studied by Raman measurement, and the results show that doping Er is a feasible method to adjust the magnetic properties of MnBi₂Te₄.

Key words: MnBi₂Te₄, antiferromagnetic topological insulator, Er doping, crystallinity, magnetic property, phonon vibration mode

中图分类号:

欧鑫林, 王进, 赵可. Er掺杂MnBi₂Te₄晶体生长及其微结构研究[J]. 人工晶体学报, 2023, 52(9): 1635-1640.

OU Xinlin, WANG Jin, ZHAO Ke. Growth and Microstructure of Er-Doped MnBi₂Te₄ Crystal[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1635-1640.

参考文献

[1] TOKURA Y, YASUDA K, TSUKAZAKI A. Magnetic topological insulators[J]. Nature Reviews Physics, 2019, 1(2): 126-143.
[2] LUO W D, QI X L. Massive Dirac surface states in topological insulator/magnetic insulator heterostructures[J]. Physical Review B, 2013, 87(8): 085431.
[3] CHEN Y L, CHU J H, ANALYTIS J G, et al. Massive Dirac fermion on the surface of a magnetically doped topological insulator[J]. Science, 2010, 329(5992): 659-662.
[4] HE K, WANG Y Y, XUE Q K. Topological materials: quantum anomalous Hall system[J]. Annual Review of Condensed Matter Physics, 2018, 9: 329-344.
[5] CHANG C Z, ZHANG J S, FENG X, et al. Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator[J]. Science, 2013, 340(6129): 167-170.
[6] CHANG C Z, ZHAO W W, KIM D Y, et al. High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator[J]. Nature Materials, 2015, 14(5): 473-477.
[7] FENG X, FENG Y, WANG J, et al. Thickness dependence of the quantum anomalous Hall effect in magnetic topological insulator films[J]. Advanced Materials, 2016, 28(30): 6386-6390.
[8] ZHANG D Q, SHI M J, ZHU T S, et al. Topological axion states in the magnetic insulator MnBi₂Te₄ with the quantized magnetoelectric effect[J]. Physical Review Letters, 2019, 122(20): 206401.
[9] OTROKOV M M, KLIMOVSKIKH I I, BENTMANN H, et al. Prediction and observation of an antiferromagnetic topological insulator[J]. Nature, 2019, 576(7787): 416-422.
[10] PENG Y, XU Y. Proximity-induced Majorana hinge modes in antiferromagnetic topological insulators[EB/OL]. 2018: arXiv: 1809.09112. https://arxiv.org/abs/1809.09112.
[11] CUI J H, SHI M Z, WANG H H, et al. Transport properties of thin flakes of the antiferromagnetic topological insulator MnBi₂Te₄[J]. Physical Review B, 2019, 99(15): 155125.
[12] DENG Y J, YU Y J, SHI M Z, et al. Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi₂Te₄[J]. Science, 2020, 367(6480): 895-900.
[13] ZHU J J, NAVEED M, CHEN B, et al. Magnetic and electrical transport study of the antiferromagnetic topological insulator Sn-doped MnBi₂Te₄[J]. Physical Review B, 2021, 103(14): 144407.
[14] CHEN B, FEI F C, ZHANG D Q, et al. Intrinsic magnetic topological insulator phases in the Sb doped MnBi₂Te₄ bulks and thin flakes[J]. Nature Communications, 2019, 10(1): 1-8.
[15] LI J H, LI Y, DU S Q, et al. Intrinsic magnetic topological insulators in van der Waals layered MnBi₂Te₄-family materials[J]. Science Advances, 2019, 5(6): eaaw5685.
[16] 李世雯. 稀土(Nd, Sm, Gd, Dy, Yb, Sc)掺杂铁氧体的制备和性能研究[D].南宁: 广西大学, 2021.
LI S W. Preparation and properties of rare earth (Nd, Sm, Gd, Dy, Yb, Sc) doped ferrite[J]. Nanning: Guangxi University, 2021 (in Chinese).
[17] LIU C, WANG Y C, LI H, et al. Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator[J]. Nature Materials, 2020, 19(5): 522-527.
[18] ZEUGNER A, NIETSCHKE F, WOLTER A U B, et al. Chemical aspects of the candidate antiferromagnetic topological insulator MnBi₂Te₄[J]. Chemistry of Materials, 2019, 31(8): 2795-2806.
[19] OVCHINNIKOV D, HUANG X, LIN Z, et al. Intertwined topological and magnetic orders in atomically thin Chern insulator MnBi₂Te₄[J]. Nano Letters, 2021, 21(6): 2544-2550.
[20] CHO Y, KANG J H, LIANG L B, et al. Phonon modes and Raman signatures of MnBi_2nTe_3n+1(n=1, 2, 3, 4) magnetic topological heterostructures[J]. Physical Review Research, 2022, 4: 013108.
[21] SHI M Z, LEI B, ZHU C S, et al. Magnetic and transport properties in the magnetic topological insulators MnBi₂Te₄(Bi₂Te₃)_n (n=1,2)[J]. Physical Review B, 2019, 100(15): 155144.
[22] QIAN T M, YAO Y T, HU C W, et al. Magnetic dilution effect and topological phase transitions in (Mn_1-xPb_x)Bi₂Te₄[EB/OL]. 2022: arXiv: 2206.01324. https://arxiv.org/abs/2206.01324.

Er掺杂MnBi₂Te₄晶体生长及其微结构研究

Growth and Microstructure of Er-Doped MnBi₂Te₄ Crystal

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐

Metrics

本文评价

[1]	钏定泽, 颜廷亭, 刘继涛. 磁性羟基磷灰石晶须的制备及其在磁场下的磁响应行为研究[J]. 人工晶体学报, 2023, 52(8): 1532-1539.
[2]	刘璇, 郭菲菲, 龙伟, 惠增哲, 何爱国, 徐瑰宇. Gd₂O₃掺杂BiFeO₃陶瓷的漏电流特性及磁性能研究[J]. 人工晶体学报, 2023, 52(6): 1161-1167.
[3]	王岐, 朱晓明, 王军涛, 李泽宇, 姬柳迪, 胡鹏. 一例铽簇合物的合成、晶体结构与磁性[J]. 人工晶体学报, 2023, 52(4): 598-603.
[4]	徐艳, 崔磊, 李新星, 吉玉如, 王楠, 王宣, 王肖阳, 高文康. 萘基二膦酸钴配合物的合成、晶体结构和磁性质[J]. 人工晶体学报, 2022, 51(7): 1233-1240.
[5]	贾维海, 杨昆, 王智, 周庭艳, 黄海深, 吴波. 完全Heusler合金Cr₂ZrSb/Sc₂FeSn(100)异质结的结构、电磁特性及电子性质[J]. 人工晶体学报, 2022, 51(6): 1020-1027.
[6]	张爱梅, 潘茜茜, 张大山, 朱佳佳, 吴小山. Ho³⁺掺杂对六角YMn_0.8Fe_0.2O₃微结构和磁性质的调控[J]. 人工晶体学报, 2022, 51(12): 2096-2103.
[7]	陈聪, 岑伟富, 熊启杭, 吕林, 姚冰, 杨吟野. 六方Fe₂Ge合金块体及其(001)表面电子结构和磁性的第一性原理[J]. 人工晶体学报, 2022, 51(11): 1895-1902.
[8]	李波, 沈红, 王霏宇, 毛逢银, 李勇辉. 基于混合配体的镍(Ⅱ)配合物的晶体结构、荧光性质和磁性研究[J]. 人工晶体学报, 2022, 51(11): 1952-1957.
[9]	张飞鹏, 路清梅, 李虹霏, 房慧, 刘卫强, 张东涛, 岳明. MnGa合金体的电子结构与磁性质的研究[J]. 人工晶体学报, 2022, 51(1): 65-71.
[10]	岳文锋, 俞亮, 郭全胜, 贾婷婷, 于淑会. 多铁性材料的应变调控[J]. 人工晶体学报, 2022, 51(1): 154-169.
[11]	高腾, 邢锟, 吴功辉, 陈新, 胡晓琳, 庄乃锋. Bi_26-x-yM_xN_yO₄₀(M, N=Fe, Co, Gd)软铋矿薄膜的制备和强磁光效应[J]. 人工晶体学报, 2021, 50(9): 1655-1661.
[12]	张静, 师倩莹, 龚浩, 郭雨菲, 张卫珂. MCNOs/CdS双效光催化剂的制备及其性能研究[J]. 人工晶体学报, 2021, 50(8): 1485-1495.
[13]	谭心, 张博晨, 任元, 陈成斌, 刘岳飞. Er掺杂金刚石缺陷的第一性原理研究[J]. 人工晶体学报, 2021, 50(6): 1023-1028.
[14]	姬凯迪, 高灿灿, 杨发顺, 熊倩, 马奎. 后退火气氛对磁控溅射制备β-Ga₂O₃薄膜材料的影响[J]. 人工晶体学报, 2021, 50(6): 1056-1061.
[15]	霍广鹏, 张晓东, 宋宏远, 惠玉玉, 杜晓丽, 陈亮维, 虞澜. 室温铁磁性Sr₃YCo₄O_10.5+δ多晶有序化的烧结工艺及电磁性能[J]. 人工晶体学报, 2021, 50(6): 1082-1088.