全TOPCon电池正面多晶硅层硼掺杂工艺

摘要/Abstract

摘要： 为提升隧穿氧化层钝化接触(TOPCon)电池光电转换效率,本文通过高温扩散在n型TOPCon电池正面制作p型隧穿氧化层钝化接触结构,提升发射极钝化性能,减少正面金属复合。本文研究了不同沉积时间、推进温度、推进时间等工艺参数对实验样品钝化性能及掺杂曲线的影响。实验结果表明,当沉积时间为1 500 s,推进温度为920 ℃,推进时间为20 min时,掺硼多晶硅层可获得较优的钝化性能及掺杂浓度,其中样品多晶硅层硼掺杂浓度达到1.40×10²⁰ cm^-3,隐开路电压(iV_oc)大于720.0 mV。依据该参数制备的TOPCon电池光电转换效率可达23.89%,对应的短路电流密度为39.36 mA/cm²,开路电压(V_oc)达到726.4 mV,填充因子(FF)为83.54%。

关键词: TOPCon电池, 钝化接触, 硼扩散, 钝化, 电流密度, 光电转换效率

Abstract: In order to improve the efficiency of tunneling oxide passivated contact (TOPCon) cells, a p-type tunneling oxide passivation contact structure was fabricated on the front of N-type TOPCon cells through high-temperature diffusion, improving the emitter passivation performance and reducing front metal recombination. The effects of different deposition time, drive-in temperature, drive-in time and other process parameters on the passivation performance and doping curve of experimental samples were investigated. The experimental results show that when the deposition time is 1 500 s, the drive-in temperature is 920 ℃, and the drive-in time is 20 min, the boron doped polysilicon layer can achieve better passivation performance and boron doping concentration, with the doping concentration of sample polycrystalline silicon layer reaching 1.40×10²⁰ cm^-3. The implied open circuit voltage(iV_oc) is greater than 720.0 mV. The photoelectric conversion efficiency of TOPCon cells prepared based on this parameter can reach 23.89%, corresponding to a short-circuit current density of 39.36 mA/cm², the open circuit voltage (V_oc) is 726.4 mV, and the fill factor (FF) is 83.54%

Key words: TOPCon cell, tunnel oxide passivation contact, boron diffusion, passivation, current density, photoelectric conversion efficiency

中图分类号:

TM914.4

张博, 宋志成, 倪玉凤, 魏凯峰. 全TOPCon电池正面多晶硅层硼掺杂工艺[J]. 人工晶体学报, 2024, 53(2): 329-335.

ZHANG Bo, SONG Zhicheng, NI Yufeng, WEI Kaifeng. Boron Doping Technology for the Front Polysilicon Layer of Full TOPCon Cells[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 329-335.

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