欢迎访问《人工晶体学报》官方网站,今天是 分享到:

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (8): 1386-1393.

• 研究论文 • 上一篇    下一篇

二维MXene材料CrVCF2的电子性质和磁性的第一性原理研究

刘晓莹1, 黄海深2, 孙丽3, 潘孟美3, 尚真真4   

  1. 1.海南师范大学教师教育学院,海口 571158;
    2.遵义师范学院物理与电子科学学院,遵义 563006;
    3.海南师范大学物理与电子工程学院,海口 571158;
    4.琼台师范学院理学院,海口 571127
  • 收稿日期:2024-03-21 出版日期:2024-08-15 发布日期:2024-08-14
  • 通信作者: 尚真真,博士,讲师。E-mail:enenshang.851117@163.com
  • 作者简介:刘晓莹(1973—),女,新疆维吾尔自治区人,副教授。E-mail:zjxyliu@qq.com
  • 基金资助:
    海南省自然科学基金面上项目(121MS032);贵州省遵义市市校联合基金(遵市科合HZ字〔2022〕128号);遵义师范学院科研项目(遵师BS〔2022〕10号)

First-Principles Study on the Electronic and Magnetic Properties of MXene 2D Material CrVCF2

LIU Xiaoying1, HUANG Haishen2, SUN Li3, PAN Mengmei3, SHANG Zhenzhen4   

  1. 1. College of Teacher Education, Hainan Normal University, Haikou 571158, China;
    2. School of Physics and Electronic Science, Zunyi Normal College, Zunyi 563006, China;
    3. College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China;
    4. School of Science, Qiongtai Normal University, Haikou 571127, China
  • Received:2024-03-21 Online:2024-08-15 Published:2024-08-14

摘要: 采用基于密度泛函理论的第一性原理研究了—F官能团对Janus型MXene二维材料CrVC的结构、电子性质和磁性的影响。计算结果表明,—F官能团改变了CrVC的电子性质和磁性,CrVCF2的9种可能结构的基态是铁磁态,其中CrVCF2-33结构的能量最低,是最为稳定的基态结构,其磁矩为5.01 μB,带隙为0.099 eV,具有半导体特性。在施加-4%~+4%的双轴拉伸与压缩应变时,CrVCF2-33的总磁矩保持不变;能量随着压缩或拉伸应变的增大而变大,但变化的幅度低于0.2 eV;带隙在应变的作用下会发生改变,当拉伸应变为2.4%时,带隙减小到0.005 eV,接近于零,可看作是自旋零带隙半导体。由此可知,适度的应变可调节CrVCF2材料的电子能带结构,甚至可形成自旋零带隙半导体,这在自旋电子学领域具有潜在的应用价值。

关键词: 第一性原理, MXene材料, —F官能团, 电子结构, 磁性, 应变

Abstract: The effects of —F functional group on the structure, electronic properties and magnetic properties of Janus-type MXene 2D material CrVC were studied by first-principles of density functional theory. The calculation results indicate that the —F functional group changes the electronic properties and magnetic properties of CrVC. The nine possible structures of CrVCF2 exhibit ferromagnetic behavior, among which the structure of CrVCF2-33 has the lowest energy and is the ground state, with a magnetic moment of 5.01 μB and a band gap of 0.099 eV, exhibiting semiconductor characteristics. The total magnetic moment of CrVCF2-33 remains unchanged when -4%~+4% biaxial strain is applied; the energy increases with either compression or tension strain, but the change is less than 0.2 eV; the band gap changes under the action of strain, when the tensile strain is 2.4%, the band gap decreases to 0.005 eV, which is close to zero. It can be considered a spin-zero band gap semiconductor. The results show that moderate strain can adjust the electronic structure of the CrVCF2 material, and it can even become a spin-zero band gap semiconductor, indicating its potential application value in the field of spintronics.

Key words: first-principles, MXene material, —F functional group, electronic structure, magnetism, strain

中图分类号: