铝掺杂对硒化铟晶体结构与性能的影响

人工晶体学报 ›› 2024, Vol. 53 ›› Issue (9): 1528-1535.

铝掺杂对硒化铟晶体结构与性能的影响

郑权^1,2, 刘学超², 王浩^2,3, 朱新峰^2,3, 潘秀红², 陈锟², 邓伟杰², 汤美波², 徐浩⁴, 吴鸿辉⁴, 金敏⁴

1.上海大学微电子学院,上海 201800;
2.中国科学院上海硅酸盐研究所,上海 200050;
3.中国科学院大学,北京 100049;
4.上海电机学院材料学院,上海 201306

收稿日期:2024-05-31 出版日期:2024-09-15 发布日期:2024-09-19
通信作者: 刘学超,博士,研究员。E-mail:xcliu@mail.sic.ac.cn
作者简介:郑权(1999—),男,山东省人,硕士研究生。E-mail:a1771384232@163.com
基金资助:
国家重点研发计划(2021YFA0716304);上海市科技创新行动计划项目(22511100300,23DZ2201500);上海学术/技术研究负责人(23XD1421200);上海高校东方学者(TP2022122);载人空间站空间科学项目

Effect of Aluminum Doping on the Crystal Structure and Properties of Indium Selenide Crystals

ZHENG Quan^1,2, LIU Xuechao², WANG Hao^2,3, ZHU Xinfeng^2,3, PAN Xiuhong², CHEN Kun², DENG Weijie², TANG Meibo², XU Hao⁴, WU Honghui⁴, JIN Min⁴

1. School of Microelectronics, Shanghai University, Shanghai 201800, China;
2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
3. University of Chinese Academy of Sciences, Beijing 100049, China;
4. College of Materials, Shanghai Dianji University, Shanghai 201306, China

Received:2024-05-31 Online:2024-09-15 Published:2024-09-19

摘要/Abstract

摘要： 硒化铟(InSe)是一种新型的窄禁带(1.3 eV)层状半导体,具有优异的塑性和电学性能,在新型电子和光电子器件中具有广泛应用前景。采用布里奇曼(Bridgman)法生长了未掺杂和铝掺杂的InSe晶体,通过能谱仪(EDS)和扫描电子显微镜(SEM)对制备材料的化学成分和表面形貌进行了表征。本文研究发现,铝掺杂可调节InSe晶体的塑性和光电性能。X射线衍射(XRD)分析表明晶体具有六方结构,结合拉曼光谱表征证实晶体结构为ε-InSe。纳米压痕测量表明,随着铝掺杂量的增加,InSe晶体的硬度和模量降低,材料的塑性提高。霍尔效应测量和光学吸收谱结果表明,铝掺杂可提升载流子浓度和禁带宽度。

关键词: InSe∶Al, 布里奇曼法, 力学性能, 电学性能, 第一性原理, 晶体结构

Abstract: Indium selenide (InSe) is a novel narrow bandgap (1.3 eV) layered semiconductor with excellent plasticity and electrical properties, and has broad application prospects in new electronic and optoelectronic devices. Undoped and aluminum doped InSe crystals were grown by Bridgman method. The chemical composition and surface morphology of the prepared materials were characterized using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM). This study founds that aluminum doping can regulate the plasticity and optoelectronic properties of InSe crystals. X-ray diffraction (XRD) analysis shows that the crystal has a hexagonal structure, and Raman spectroscopy characterization confirms that the crystal structure is ε-InSe. Nanoindentation measurements indicate that as the aluminum doping content increases, the hardness and modulus of InSe crystal decrease, while the plasticity of the material increases. Hall effect measurement and optical absorption spectrum results indicate that aluminum doping can increase the carrier concentration and bandgap width.

Key words: InSe∶Al, Bridgman method, mechanical property, electrical performance, first-principles, crystal structure

中图分类号:

郑权, 刘学超, 王浩, 朱新峰, 潘秀红, 陈锟, 邓伟杰, 汤美波, 徐浩, 吴鸿辉, 金敏. 铝掺杂对硒化铟晶体结构与性能的影响[J]. 人工晶体学报, 2024, 53(9): 1528-1535.

ZHENG Quan, LIU Xuechao, WANG Hao, ZHU Xinfeng, PAN Xiuhong, CHEN Kun, DENG Weijie, TANG Meibo, XU Hao, WU Honghui, JIN Min. Effect of Aluminum Doping on the Crystal Structure and Properties of Indium Selenide Crystals[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1528-1535.

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