辐照对超快闪烁晶体YAG∶Yb闪烁发光的影响研究

doi:10.16553/j.cnki.issn1000-985x.2025.0181

摘要/Abstract

摘要： 本文研究了不同Yb³⁺掺杂浓度（1.5%、15%、50%，原子数分数）的YAG∶Yb晶体，以及15%Yb³⁺共掺0.05%Na⁺和0.05%Ba²⁺样品在¹³⁷Cs伽马源辐照前、后透过率，光电子产额及阴极荧光（CL）发光分布特性变化。研究发现，15%Yb³⁺单掺样品在辐照后辐照诱导吸收最强，但其发光均匀性基本保持稳定，归一化CL强度的RMS/Mean（均方差/平均值）值仅由3.17%（370 nm）和3.20%（475 nm）上升至5.32%和4.66%。而1.5%Yb³⁺样品虽辐照诱导吸收较弱，但发光离散性显著恶化（370 nm的RMS/Mean值由2.36%上升至10.61%），光电子产额下降幅度约22.2%，能量分辨率由62.0%劣化至116.6%，表明在低掺杂条件下辐照诱导缺陷对发光空间均匀性的破坏可能阻碍能量传递路径从而抑制电荷迁移过程，导致紫外可见发光减弱。50%Yb³⁺样品辐照后辐照诱导吸收和发光不均性均较显著，但其光电子产额及能量分辨率相对稳定，可能与高掺杂引起的结构畸变对辐照缺陷效应的部分补偿有关。共掺Na⁺/Ba²⁺样品在抑制辐照诱导吸收和发光稳定性方面均表现最优，表明适当的共掺杂有助于抑制缺陷形成并提升晶体的抗辐照能力。综合结果表明，YAG∶Yb晶体的辐照稳定性不仅受辐照诱导缺陷吸收的影响，还与晶体缺陷对发光均匀性的调控密切相关。

关键词: YAG∶Yb晶体; 辐照损伤; 阴极荧光; 发光均匀性; 掺杂效应; 闪烁发光

Abstract: This study investigated the effects of gamma-ray irradiation from a ¹³⁷Cs source on the transmittance，photoelectron yield，and cathodoluminescence （CL） emission distribution characteristics of YAG∶Yb crystals with various Yb³⁺ doping concentrations （1.5%，15% and 50%，atomic fraction），as well as 15%Yb³⁺ co-doped with 0.05%Na⁺ and 0.05%Ba²⁺. The results show that the 15%Yb³⁺ doped sample exhibits the strongest radiation-induced absorption after gamma-ray irradiation，while its luminescence uniformity remained relatively stable. The normalized CL intensity shows an increase in the root-mean-square deviation to mean ratio （RMS/Mean） from 3.17% （370 nm） and 3.20% （475 nm） to 5.32% and 4.66%，respectively. In contrast，the 1.5%Yb³⁺ doped sample exhibits weaker radiation-induced absorption but significantly degrade emission uniformity，with the RMS/Mean value for the 370 nm emission increasing from 2.36% to 10.61%. Its photoelectron yield decrease by approximately 22.2%，and the energy resolution deteriorate from 62.0% to 116.6%. These results indicate that under low doping conditions，radiation-induced defects disrupt the spatial uniformity of luminescence，potentially obstructing energy transfer pathways and suppressing charge migration processes，thereby weakening the UV-visible emission. The 50%Yb³⁺ doped sample exhibits pronounced radiation-induced absorption and luminescence non-uniformity after irradiation. However，its photoelectron yield and energy resolution remained relatively stable，which may be attributed to partial compensation of radiation defect effects by structural distortion induced by the high doping concentration. The Na⁺/Ba²⁺ co-doped samples exhibits optimal performance in both radiation-induced absorption suppression and luminescence stability，suggesting that appropriate co-doping can inhibit defect formation and enhance the crystal’s radiation resistance. The comprehensive results demonstrate that the radiation resistance of YAG∶Yb crystals is influenced not only by radiation-induced defect absorption but also closely related to the regulation of luminescence uniformity by crystal defects.

Key words: YAG∶Yb crystal; radiation damage; cathodoluminescence; luminescence uniformity; doping effect; scintillation luminescence

中图分类号:

O77⁺4

彭晨, 张璐, 潘明艳, 颜欣龙, 贾宇桢, 王瑞辰, 段韦恒, 何伟民, 杨伟虎, 宋柏君, 程瑶, 范潇宇, 杨帆. 辐照对超快闪烁晶体YAG∶Yb闪烁发光的影响研究[J]. 人工晶体学报, 2026, 55(2): 191-200.

PENG Chen, ZHANG Lu, PAN Mingyan, YAN Xinlong, JIA Yuzhen, WANG Ruichen, DUAN Weiheng, HE Weimin, YANG Weihu, SONG Baijun, CHENG Yao, FAN Xiaoyu, YANG Fan. Investigation on Effects of Irradiation on the Scintillation Luminescence of Ultrafast Scintillation Crystal YAG∶Yb[J]. Journal of Synthetic Crystals, 2026, 55(2): 191-200.

图/表 15

图1 YAG∶Yb晶体辐照前、后的透射谱

Fig.1 Transmittance spectra of YAG∶Yb crystals before and after irradiation

图2 YAG∶Yb晶体辐照后的RIAC谱

Fig.2 RIAC spectra of YAG∶Yb crystals after irradiation

图3 YAG∶Yb晶体辐照前、后的脉冲高度谱

Fig.3 Pulse height spectra of YAG∶Yb crystals before and after irradiation

图4 YAG∶Yb晶体辐照后RIAC和光电子产额损失的关系

Fig.4 RIAC versus the photoelectron yield loss of YAG∶Yb crystals after irradiation

图5 CL Mapping测试示意图

Fig.5 Schematic diagram of CL Mapping measurement

图6 YAG∶Yb晶体的归一化CL谱

Fig.6 Normalized CL spectra of YAG∶Yb crystals

图7 YAG∶Yb晶体的CL Mapping数据及370和475 nm发光峰的强度分布

Fig.7 CL Mapping data and intensity distribution of 370 and 475 nm emission peaks in YAG∶Yb crystals

表1 Yb3+浓度与370和475 nm发光离散性关系

Table 1 Relationship between Yb3+ concentration and luminescence intensity heterogeneity of 370 and 475 nm

Yb³⁺ content/%	370 nm luminescence intensity （RMS/Mean）/%	475 nm luminescence intensity （RMS/Mean）/%
1.5	2.36	3.85
15	3.17	3.20
50	4.75	4.34
15（+0.05%Na⁺+0.05%Ba²⁺）	5.39	6.87

表2 不同Yb3+浓度YAG∶Yb晶体的370和475 nm平均发光强度比值

Table 2 Average luminescence intensity ratio of 370 and 475 nm for YAG∶Yb crystals with different Yb3+ concentrations

Yb³⁺ content/%	Average 370/475 nm luminescence intensity ratio
1.5	1.34
15	1.29
50	1.30
15（+0.05%Na⁺+0.05%Ba²⁺）	1.30

图8 辐照后YAG∶Yb晶体的归一化CL谱

Fig.8 Normalized CL spectra of YAG∶Yb crystals after irradiation

图9 辐照后的YAG∶Yb晶体的CL Mapping数据及370和475 nm发光峰的强度分布

Fig.9 CL Mapping data and intensity distribution of 370 and 475 nm emission peaks in YAG∶Yb crystals after irradiation

表3 辐照后Yb3+浓度与370和475 nm发光离散性关系

Table 3 Relationship between Yb3+ concentration and luminescence intensity heterogeneity of 370 and 475 nm after irradiation

Yb³⁺ content/%	370 nm luminescence intensity （RMS/Mean）/%	475 nm luminescence intensity （RMS/Mean）/%
1.5	10.61	8.83
15	5.32	4.66
50	13.38	13.20
15（+0.05%Na⁺+0.05%Ba²⁺）	7.44	8.08

表4 辐照后不同Yb3+浓度YAG∶Yb晶体的370和475 nm平均发光强度比值

Table 4 Average luminescence intensity ratio of 370 and 475 nm for YAG∶Yb crystals with different Yb3+ concentrations after irradiation

Yb³⁺ content/%	Average 370/475 nm luminescence intensity ratio
1.5	1.33
15	1.24
50	1.31
15（+0.05%Na⁺+0.05%Ba²⁺）	1.29

图10 辐照前、后YAG∶Yb晶体发光强度的RMS/Mean值比较

Fig.10 Comparison of RMS/Mean values of luminescence intensity for YAG∶Yb crystals before and after irradiation

图11 辐照前、后YAG∶Yb晶体370/475 nm平均发光强度比值的比较

Fig.11 Comparison of average 370/475 nm luminescence intensity ratio of YAG∶Yb crystals before and after irradiation

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