影响化学机械抛光4H导电SiC晶片表面质量的关键参数研究
郭钰;彭同华;刘春俊;袁文霞;蔡振立;张贺;王波
Key Parameters of Chemical Mechanical Polishing for Obtaining Defect Free 4H-type Conductive SiC Substrate Surface
GUO Yu;PENG Tong-hua;LIU Chun-jun;YUAN Wen-xia;CAI Zhen-li;ZHANG He;WANG Bo
人工晶体学报
.
2017, (5): 759
-765
.
E-mail Alert
RSS