Preparation of LiNbO3/ITO Heterojunction Thin Films and Its Optoelectronic Properties

doi:10.16553/j.cnki.issn1000-985x.2024.0252

Abstract

Abstract: LiNbO₃/ITO（LN/ITO） heterojunction thin films were sputter-deposited on glass and silicon substrates using magnetron sputtering technique at 200 ℃. The structure， morphology， and optoelectronic properties of the films were characterized through X-ray diffraction （XRD）， atomic force microscope （AFM）， ultraviolet-visible spectrophotometer， and variable temperature Hall effect measurements. XRD analysis reveals that the stacked sequence of LN/ITO heterojunction exhibited superior growth orientation and crystalline properties. AFM images show that the surface of the heterojunction thin film at 200 ℃ is relatively smooth with minimal protrusions. The ultraviolet-visible spectrophotometer indicates that the transmittance of the stacked heterojunction thin film in the visible light range was enhanced compared to that of the LN single-layer film， and the transmittance of the heterojunction film was further improved after annealing. The electrical properties of the LN/ITO heterojunction were investigated using a Hall effect tester. The results demonstrate that the LN/ITO heterojunction thin film is an p-type semiconductor. Compared to the LN single-layer film， the conductivity of the LN/ITO heterojunction thin film was increased by 11 orders of magnitude.

Key words: LN/ITO thin film; heterojunction; magnetron sputtering coating; light transmittance; Hall effect

CLC Number:

O484.1

ZHU Jiayi, DU Shuai, ZHOU Pengfei, ZHENG Fan, CHEN Yunlin. Preparation of LiNbO₃/ITO Heterojunction Thin Films and Its Optoelectronic Properties[J]. Journal of Synthetic Crystals, 2025, 54(5): 819-824.

Figures/Tables 6

Fig.1 XRD patterns of ITO/LN and LN/ITO thin films for triple deposition time

Fig.2 SEM cross-sectional image of LN/ITO heterojunction thin film with triple deposition time

Fig.3 AFM planar （a） and three-dimensional （b） images of LN/ITO heterojunction thin films for onefold deposition time

Fig.4 UV-Vis absorption spectra of LN monolayer films， ITO monolayer films， and LN/ITO heterojunction thin films of the same thickness

Fig.5 UV-Vis absorption spectra of LN/ITO heterojunction thin films before and after annealing

Fig.6 Variable temperature Hall tests of LN/ITO heterojunction thin films

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Preparation of LiNbO₃/ITO Heterojunction Thin Films and Its Optoelectronic Properties

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