Symmetric Oxide Confinement Structure Improves 795 nm VCSEL Single-Mode Power

doi:10.16553/j.cnki.issn1000-985x.2024.0303

Abstract

Abstract: The 795 nm vertical-cavity surface-emitting laser （VCSEL）， commonly used as a laser source in rubidium atomic clocks and quantum gyroscopes， is generally designed with a single oxide confinement layer structure to ensure single-mode output. However， the output power in this structure is limited， and power consumption remains high. In this paper， PICS3D was used to simulate the position of single oxide confinement layer. The results demonstrate that as the oxide confinement layer is positioned closer to the active region， its ability to confine carriers increases. Consequently， under identical injection current conditions， devices exhibit higher output power. On this basis， symmetric double oxide confinement and quadruple oxide confinement structure VCSEL close to the active region are designed. Compared with traditional single oxide confinement VCSEL， multi oxide confinement VCSEL exhibits higher current density in the active region， the output power and power conversion efficiency are significantly improved. In addition， this paper also analyzes the effect of the number of oxide confinement layers on the optical performance of the device through the far-field and near-field， and finds that with the increase of the number of oxide confinement layers， the higher-order modes of the VCSEL are more concentrated in the exit aperture and the far-field divergence angle increases. This study is of great significance for optimizing the VCSEL performance using multiple oxide confinement and balancing the output power and optical performance.

Key words: vertical-cavity surface-emitting laser; symmetric oxide confinement structure; current density; carrier concentration; single-mode; optical field distribution

CLC Number:

TN248.4

JIA Xiuyang, JIA Zhigang, DONG Hailiang, CHEN Xiaodong, GAO Maolin, XU Bingshe. Symmetric Oxide Confinement Structure Improves 795 nm VCSEL Single-Mode Power[J]. Journal of Synthetic Crystals, 2025, 54(5): 809-818.

Figures/Tables 11

Fig.1 Schematic diagram of 795 nm VCSEL structure

Fig.2 Standing wave refractive index distribution diagrams of VCSEL. （a） Single oxide confinement structure；（b） symmetric double oxide confinement structure；（c） symmetric quadruple oxide confinement structure

Fig.3 Standing wave refractive index distribution diagrams of VCSEL

Fig.4 Electrical performance parameters of VCSEL with different structures. （a） P-I curves；（b） stimulated radiative recombination rate distribution in multiple quantum wells

Fig.5 Electron-hole concentration distribution diagrams of different structured VCSEL with multiple quantum wells

Fig.6 Electrical performance parameters of VCSEL with different structures. （a） P-I-V curves；（b） radial distribution of current density near the first quantum well on the n-side

Fig.7 Electrical performance parameters of VCSEL with different structures. （a） Distribution of stimulated radiative recombination rate；（b） PCE-I?curves

Fig.8 Net electron distribution （a） and net hole distribution （b） in three structures near the N-space first quantum well at 5 mA injection current

Fig.9 Far field distribution of VCSEL with different structures

Fig.10 Distribution of the three modes of different structures in radial direction. （a） Single oxide confinement structure；（b） symmetric double oxide confinement structure；（c） symmetric quadruple oxide confinement structure

Table 1 Γ of the three modes or VCSELs with different structures

Structure	Γ of the three modes/%
Structure	LP₀₁	LP₁₁	LP₂₁
Single oxide confined	92.4	71.8	47.4
Double oxide confined	94.8	80.5	63.4
Quadruple oxide confined	95.9	84.7	71.5

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