Research Progress on Defects in CsPbBr3 Crystals for Radiation Detectors

doi:10.16553/j.cnki.issn1000-985x.2025.0056

Abstract

Abstract: CsPbBr₃ crystal has emerged as a promising candidate material for next-generation semiconductor radiation detectors due to its high atomic number， excellent charge transport properties， and room-temperature operability. However， defects in the crystal （point defects， twins， and secondary phases） significantly degrade its performance. This review systematically analyzes the formation mechanisms of defects in CsPbBr₃ and their impact on carrier transport， lattice polaron effects dominate intrinsic scattering while point defects （e.g.， Pb interstitials） introduce deep-level traps that enhance carrier recombination， ferroelastic domains （twins） induce carrier localization through interfacial potential barriers， and secondary phases （e.g.， CsPb₂Br₅） reduce mobility and resistivity via light scattering and incoherent interfaces. The study highlights differences in defect distribution between melt- and solution-grown crystals and proposes optimization strategies such as stoichiometric control， solvent engineering， and annealing. Although CsPbBr₃ demonstrates X/γ-ray energy resolution comparable to commercial CdZnTe （e.g.， 1.4%@662 keV）， defect dynamics and ion migration hinder stability. Future research should focus on elucidating polaron-defect interactions， developing defect suppression techniques， and designing novel device architectures to advance its applications in nuclear medicine imaging and deep-space exploration.

Key words: CsPbBr₃ crystal; defect engineering; carrier lifetime; polaron; ferroelastic domain; secondary phase

CLC Number:

O734

LI Ning, ZHANG Xinlei, XIAO Bao, ZHANG Binbin. Research Progress on Defects in CsPbBr₃ Crystals for Radiation Detectors[J]. Journal of Synthetic Crystals, 2025, 54(7): 1146-1159.

Figures/Tables 13

Fig.1 Advancements process in halide perovskite materials for high-energy radiation detection［13，16-19，21-24］

Table 1 CsPbBr3 crystal X-ray detector devices and their response

Sample	Bias/V	E/（V·mm^-1）	kVp/keV	Sensitivity/（µC·Gy^-1·cm^-2）	LOD/（nGy^-1·s^-1）	Year	Reference
Film		5	30	55 684	215	2019	［25］
Film		110	35	1 700	53	2019	［26］
Film		1 200	70	1 450	500	2020	［27］
Film		1 000	50	9 085	103.6	2022	［28］
Film	7		20	823.12	14.61	2023	［29］
Film		120	50	46 961	321	2024	［30］
Crystal	8		40	770		2020	［31］
Crystal	40	20	80	1 256		2020	［32］
Crystal	5	5	40	4 086	700	2021	［33］
Crystal	50		40	6 021.99	1 890	2021	［34］
Crystal	280		50	8 800	0.02	2022	［35］
Crystal	400	267	120	34 449	52.6	2023	［36］
Crystal	1 000	435		10 283	22	2023	［37］
Crystal		100	70	9 047	104	2023	［38］
Crystal	5			30 338		2023	［39］
Crystal		500	120	46 180	10.81	2024	［40］
Crystal		180	50	9 634	1.84	2024	［41］

Table 2 CsPbBr3 crystal γ-ray detector devices and their response

Detector	²⁴¹Am α			²⁴¹Am γ			⁵⁷Co γ			¹³⁷Cs γ			Year	Reference
Detector	Bias/V	E/（V·cm^-1）	ER/%	Bias/V	E/（V·cm^-1）	ER/%	Bias/V	E/（V·cm^-1）	ER/%	Bias/V	E/（V·cm^-1）	ER/%	Year	Reference
Planar				150	1 167	9.60	150	1 167	3.90	900	7 087	3.80	2018	［16］
Planar	90		15.00				100	1 167	4.60				2019	［17］
Planar										700	2 800	5.50	2020	［14］
Planar										350	1 522	11	2020	［42］
Planar				500	1 976	28.30	500	1 976	13.10	500	1 976	5.50	2020	［15］
Planar				500	3 759	5.50	500	3 759	3.20	500		1.40	2021	［18］
Quasi-hemispherical										1 600		1.80	2021	［18］
Pixel										500		1.40	2021	［18］
Planar	240	2 400	11.10	300	1 000	27.10				500	1 667	12.20	2022	［43］
Planar							400	2 000	4.90				2022	［35］
Planar				350		18.00	350		12.00				2022	［44］
Planar										350		2	2022	［45］
Planar	100		7.66	600		13.50							2022	［46］
Planar	700	8 750	5.70										2022	［47］
Quasi-hemispherical				200	1 250	11.76				200	1 250	11.47	2022	［48］
Planar							200		4.40				2023	［49］
Planar				300		11.40	300		6.10				2023	［50］
Planar							800	4 706	7.50				2023	［51］
Quasi-hemispherical										100		9.91	2023	［52］
Pixel										700	2 892	7.31	2023	［53］
Planar										400		12.85	2024	［54］
Planar										600		7.20	2024	［55］
Planar							200		3.70				2024	［56］
Planar	320	2 667	16.00			12.50						13.30	2024	［57］
Planar							800	3 636	3.90				2024	［58］
Planar	90		1.10										2024	［59］
Planar							500		4.80				2024	［60］
Planar				500		8.90	500		8.00	500		2.30	2025	［61］
Quasi-hemispherical				500		8.40	500		6.20	500		2.20	2025	［61］
VFG										3 400	3 333	1.50	2025	［62］

Fig.2 Intrinsic point defect energy levels calculated by HSE+SOC［69］

Fig.3 Point defects in CsPbBr3 charactered using thermally stimulated current （TSC） technology［46，70］. （a） Melt method；（b） solution method

Fig.4 Comparison of impurity content in CsPbBr3 crystal grown after purification of raw materials［46，70］. （a） Purified using a solution recrystallization method；（b） purified by zone refining

Fig.5 Calculated energy profile diagram of the ionic migration path and their migration paths for Cs? and Br?［72］

Fig.6 Two twin structures in CsPbBr3 crystals［74］. （a） Schematic diagrams of the （121） reflection twin， illustrating the unit cell correspondence and interface matching relationship；（b） schematic diagrams of the 90° rotation twin along the ［101］ direction， illustrating the unit cell correspondence and interface matching relationship

Fig.7 Schematic illustration of crystal structures during the structural phase transition in CsPbBr3

Fig.8 （a） In situ optical microscopy images of CsPbBr3 single-crystal thin film before and after phase transition；（b），（c） external quantum efficiency， and specific detectivity performance［76］

Fig.9 Inclusion phases in melt-grown CsPbBr3 crystals［52］. SEM images taken on the solid-liquid interface of QC-1 （a）， QC-2 （b）， and QC-3 （c）， showing the interfaces were gradually flattened， and high magnification SEM images taken on the polycrystalline regions of QC-1 （d）， QC-2 （e）， and QC-3 （f）， respectively， the red lines outline the secondary phases［52］

Fig.10 Inclusion phases in solution-grown CsPbBr3 crystals［78］. （a）~（c） Typical SEM images of well-defined SP defects with regular polyhedral morphologies；（d）~（f） ideal crystal model of SP defects bounded by low index matrix facets （100） and （110） based on the observed actual morphology；（g） morphological evolution schematic of the SP defects

Fig.11 （a），（b） SP particles distribution and size histogram in etched CPB-1；（c），（d） SP particles in etched CPB-2，（e） I-t curves for CPB-1 and CPB-2 at 1 V；（f） schematic diagram of carrier transport in CsPbBr3 matrix and SP particles under 241Am @5.48 MeV α particles irradiation；（g），（h） carrier mobility by linear fitting for CPB-1 and CPB-2；（i） α particles induced pulse shapes and the rise time （tr） under the same electric field strength （200 V·cm-1） for CPB-1 and CPB-2［77］

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Research Progress on Defects in CsPbBr₃ Crystals for Radiation Detectors

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