Improving the Thermoelectric Performance of n-Type Lead Telluride Through Iodine Doping and Multi-Scale Structural Design

doi:10.16553/j.cnki.issn1000-985x.2025.0104

Abstract

Abstract: The lower thermoelectric performance of n-type PbTe has hindered the development of mid-temperature thermoelectric applications compared to p-type lead telluride. In this study， nanometer-scale iodine doping PbTe_1-xI_x powder was synthesized through hydrothermal method， and a multi-scale structure of n-type PbTe_1-xI_x was prepared by combining annealing and spark plasma sintering （SPS） techniques， achieving electron-phonon decoupling to optimize electrical and thermal performance. The solid solution formed by iodine doping increase carrier concentration while ensuring high carrier mobility， resulting in a high power factor for n-type PbTe_1-xI_x. Meanwhile， the multi-scale structure facilitates phonon scattering， leading to a lower lattice thermal conductivity. Consequently， the ZT value of n-type PbTe_1-xI_x was significantly enhanced， reaching a ZT value of 1.29 at 650 K.

Key words: n-type lead telluride; hydrothermal method; iodine doping; multi-scale structure; thermoelectric performance

CLC Number:

TQ134.3⁺3

CHEN Jihu, LU Yani, NIE Xi. Improving the Thermoelectric Performance of n-Type Lead Telluride Through Iodine Doping and Multi-Scale Structural Design[J]. Journal of Synthetic Crystals, 2025, 54(11): 1947-1953.

Figures/Tables 5

Fig.1 XRD patterns of PbTe1-xIx （x=0， 0.005， 0.010， 0.015）

Fig.2 SEM images of PbTe0.99I0.01

Fig.3 Temperature dependence of electronic performance for PbTe1-xIx （x=0， 0.005， 0.010， 0.015）

Fig.4 Temperature dependence of thermal performance for PbTe1-xIx （x=0， 0.005， 0.010， 0.015）

Fig.5 Temperature dependence of thermalelectric performance for PbTe1-xIx （x=0， 0.005， 0.010， 0.015）

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