Simulation Study on Electrical Characteristics of New Composite Terminal Structure Lateral β -Ga2O3 Field-Effect Transistors

doi:10.16553/j.cnki.issn1000-985x.2026.0007

Abstract

Abstract: Gallium oxide （β-Ga₂O₃） power devices have emerged as a prominent research focus owing to their advantages of high voltage resistance， low loss， and low cost-effectiveness. However， the development of β-Ga₂O₃ based homojunction devices remains impeded by the persistent challenge of achieving reliable and controllable P-type doping. Meanwhile， the heterojunction termination devices still have problems that the electrical characteristics such as high on-resistance and low breakdown voltage， which fail to meet the requirements of practical applications. To address the aforementioned issues， this paper innovatively proposed a composite terminal enhanced lateral NiO/β-Ga₂O₃ heterojunction field effect transistor （HJFET） consisting of a field-limiting ring and a floating field plate made of NiO. The effects of the length of the floating field plate and the length and thickness of the field-limiting ring on the breakdown characteristics of the device were studied in detail using the TCAD software. The results show that the combination of the field-limiting ring and the floating field plate can effectively alleviate the edge electric field concentration effect at the gate， and the high dielectric constant dielectric HfO₂ can regulate the edge electric field of the heterojunction to be within the channel of β-Ga₂O₃. Eventually， the device achieves a high breakdown voltage of 2 537 V. For the device with the floating field plate， a low on-resistance of 14.21 mΩ·cm²， a breakdown voltage of 2 358 V， and a PFOM of 391.285 MW·cm^-2 are obtained. The design of this study provides a new idea for the design and optimization of high-power and high-voltage gallium oxide power devices.

Key words: β-Ga₂O₃ power device; enhanced HJFET; HfO₂; p-NiO; field-limiting ring; floating field plate; edge electric field concentration

CLC Number:

O738

LI Ziwei, YU Jiangang, LIU Jinhua, LI Tengteng, YANG Xiaoli, LEI Cheng, LIANG Ting. Simulation Study on Electrical Characteristics of New Composite Terminal Structure Lateral β -Ga₂O₃ Field-Effect Transistors[J]. Journal of Synthetic Crystals, 2026, 55(5): 772-781.

Figures/Tables 12

Table 1 Simulation material parameters of β -Ga2O3

Parameter	β-Ga₂O₃
Band gap，E_g/eV	4.8
Electron mobility，μ/（cm²·V^-1·s^-1）	300
Dielectric constant，κ_s	10.2
Electron affinity，χ/eV	4.0
Valence band state density，N_v/cm^-3	3.72×10¹⁸
Conduction band state density，N_C/cm^-3	3.72×10¹⁸
Effective electronic mass，m₀	0.28
Breakdown field strength，E_c/（MV·cm^-1）	8

Table 2 Simulation material parameters of NiO

Parameter	NiO
Band gap，E_g/eV	3.7
Hole mobility，μ/（cm²·V^-1·s^-1）	0.24
Dielectric constant，κ_s	11.8
Electron affinity，χ/eV	1.8
Effective electronic mass，m₀	6
Breakdown field strength，E_c/（MV·cm^-1）	4.8~6.2

Table 3 Avalanche ionization fitting parameters of β -Ga2O3

Parameter	Value
a/cm^-1	7.06×10⁵
b/（V·cm^-1）	2.1×10⁷
c	0
d	0
$ℏ$ ω_op/eV	0.063

Table 3 Avalanche ionization fitting parameters of β -Ga2O3

Parameter	Value
a/cm^-1	7.06×10⁵
b/（V·cm^-1）	2.1×10⁷
c	0
d	0
$ℏ$ ω_op/eV	0.063

Fig.1 Cross-section schematic diagram of a lateralβ-Ga2O3 HJFET with HfO2 oxide layer

Fig.2 Current （I）-voltage （V） characteristics of a lateralβ-Ga2O3 HJFET with HfO2 oxide layer

Fig.3 Comparison of breakdown characteristics of different devices

Fig.4 Cross-section schematic diagram of a lateralβ-Ga2O3 HJFET with floating field plate

Fig.5 Effects ofLGF on device breakdown characteristics

Fig.6 Effects ofTFP andLFP on device breakdown characteristics. （a） Breakdown characteristic curves of differentTFP devices；（b） breakdown characteristic curves of differentLFP devices；（c） tangential distribution of electric field peak at P3 and P4 of differentLFP devices；（d） electric field distribution of differentLFP devices

Fig.7 Cross-section schematic diagram of a lateralβ-Ga2O3 HJFET with integrated floating field plate and field-limiting ring composite terminal

Fig.8 Comparison ofI-V characteristics of different devices

Fig.9 Effects ofLFLR and TFLR on device breakdown characteristics. （a） Breakdown characteristic curves of differentLFLR devices；（b） breakdown characteristic curves of differentTFLR devices；（c） tangential distribution of electric field peak at P3 and P4 of differentTFLR devices；（d） comparison of PFOM of differentLFP devices

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Simulation Study on Electrical Characteristics of New Composite Terminal Structure Lateral β -Ga₂O₃ Field-Effect Transistors

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