Journal of Synthetic Crystals ›› 2026, Vol. 55 ›› Issue (6): 949-955.DOI: 10.16553/j.cnki.issn1000-985x.2026.0036
• Research Articles • Previous Articles Next Articles
SHEN Yunan1(
), PING Yutong1, HUANG Miaoyan1, CHEN Yue1, LIU Yushuang1,2(
)
Received:2026-03-09
Online:2026-06-20
Published:2026-07-07
Contact:
LIU Yushuang
CLC Number:
SHEN Yunan, PING Yutong, HUANG Miaoyan, CHEN Yue, LIU Yushuang. Formation Mechanism of Vacancies on M2SnC (M=Ti, V, Hf, Zr) and Its Effect on Mechanical Properties[J]. Journal of Synthetic Crystals, 2026, 55(6): 949-955.
Fig.2 Monovacancy formation energies of M vacancy,Sn vacancy and C vacancy in 2×2×1 supercell of M2SnC phases. (a) Ti2SnC; (b) V2SnC; (c) Hf2SnC; (d) Zr2SnC
Fig.4 Formation enthalpy Hf of M2SnC crystals without point vacancy and with different types of monovacancy. (a) Ti2SnC;(b) V2SnC; (c) Hf2SnC; (d) Zr2SnC
| Phase | C11/GPa | C12/GPa | C13/GPa | C33/GPa | C44/GPa |
|---|---|---|---|---|---|
| Ti2SnC | 257.575 50 | 70.217 00 | 62.283 93 | 257.704 40 | 95.645 25 |
| Ti2SnC(VSn) | 259.214 60 | 66.129 55 | 62.966 35 | 222.275 80 | 77.989 10 |
| V2SnC | 271.001 20 | 107.306 85 | 139.287 75 | 283.238 90 | 114.747 70 |
| V2SnC(VSn) | 288.961 85 | 98.602 45 | 118.899 32 | 258.438 90 | 101.821 50 |
| Hf2SnC | 268.140 20 | 54.459 50 | 80.382 32 | 257.340 60 | 92.706 90 |
| Hf2SnC(VSn) | 231.234 40 | 54.404 20 | 86.183 92 | 208.161 00 | 78.019 70 |
| Zr2SnC | 226.567 55 | 54.509 00 | 88.838 37 | 233.370 85 | 98.133 60 |
| Zr2SnC(VSn) | 220.923 80 | 68.802 75 | 53.535 88 | 117.966 35 | 87.655 30 |
Table 1 Key elastic constants of Sn vacancy containing M2SnC phases (M= Ti,V,Hf,Zr)
| Phase | C11/GPa | C12/GPa | C13/GPa | C33/GPa | C44/GPa |
|---|---|---|---|---|---|
| Ti2SnC | 257.575 50 | 70.217 00 | 62.283 93 | 257.704 40 | 95.645 25 |
| Ti2SnC(VSn) | 259.214 60 | 66.129 55 | 62.966 35 | 222.275 80 | 77.989 10 |
| V2SnC | 271.001 20 | 107.306 85 | 139.287 75 | 283.238 90 | 114.747 70 |
| V2SnC(VSn) | 288.961 85 | 98.602 45 | 118.899 32 | 258.438 90 | 101.821 50 |
| Hf2SnC | 268.140 20 | 54.459 50 | 80.382 32 | 257.340 60 | 92.706 90 |
| Hf2SnC(VSn) | 231.234 40 | 54.404 20 | 86.183 92 | 208.161 00 | 78.019 70 |
| Zr2SnC | 226.567 55 | 54.509 00 | 88.838 37 | 233.370 85 | 98.133 60 |
| Zr2SnC(VSn) | 220.923 80 | 68.802 75 | 53.535 88 | 117.966 35 | 87.655 30 |
| Phase | B/GPa | G/GPa | E/GPa | ν | HV/GPa |
|---|---|---|---|---|---|
| Ti2SnC | 129.15 | 95.51 | 229.87 | 0.203 4 | 16.47 |
| Ti2SnC(VSn) | 124.64 | 86.20 | 211.02 | 0.217 8 | 14.33 |
| V2SnC | 176.88 | 89.30 | 229.31 | 0.283 9 | 10.17 |
| V2SnC(VSn) | 167.66 | 92.29 | 233.95 | 0.267 4 | 11.49 |
| Hf2SnC | 135.96 | 96.64 | 234.39 | 0.212 7 | 15.88 |
| Hf2SnC(VSn) | 124.88 | 77.67 | 192.99 | 0.203 4 | 11.68 |
| Zr2SnC | 127.40 | 85.72 | 210.06 | 0.225 2 | 13.70 |
| Zr2SnC(VSn) | 96.30 | 73.41 | 175.60 | 0.196 1 | 14.15 |
Table 2 Various mechanical properties of Sn vacancy containing M2SnC phases (M= Ti,V,Hf,Zr)
| Phase | B/GPa | G/GPa | E/GPa | ν | HV/GPa |
|---|---|---|---|---|---|
| Ti2SnC | 129.15 | 95.51 | 229.87 | 0.203 4 | 16.47 |
| Ti2SnC(VSn) | 124.64 | 86.20 | 211.02 | 0.217 8 | 14.33 |
| V2SnC | 176.88 | 89.30 | 229.31 | 0.283 9 | 10.17 |
| V2SnC(VSn) | 167.66 | 92.29 | 233.95 | 0.267 4 | 11.49 |
| Hf2SnC | 135.96 | 96.64 | 234.39 | 0.212 7 | 15.88 |
| Hf2SnC(VSn) | 124.88 | 77.67 | 192.99 | 0.203 4 | 11.68 |
| Zr2SnC | 127.40 | 85.72 | 210.06 | 0.225 2 | 13.70 |
| Zr2SnC(VSn) | 96.30 | 73.41 | 175.60 | 0.196 1 | 14.15 |
Fig.5 Electronic density of states of V2SnC and Sn vacancy containing V2SnC. (a),(b) Partial density of states (PDOS) and local density of states (LDOS) of V2SnC; (c),(d) PDOS and LDOS of Sn vacancy containing V2SnC
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