Abstract: Amorphous hydrogenated carbon films have been deposited with benzene in an electron cyclotron resonance (ECR) plasma system. To approach as a resist in dry etching processing, etching properties of the films in oxygen plasma have been investigated. The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions.

Key words: Amorphous hydrogenated carbon films have been deposited with benzene in an electron cyclotron resonance (ECR) plasma system. To approach as a resist in dry etching processing, etching properties of the films in oxygen plasma have been investigated. The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions.