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JOURNAL OF SYNTHETIC CRYSTALS ›› 2004, Vol. 33 ›› Issue (4): 496-499.

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Formation of Silicon Carbon Nitride Crystals and Aligned Silicon Carbon Nitride Microrods by Microwave Plasma Chemical Vapor Deposition

  

  • Online:2004-08-15 Published:2021-01-20

Abstract: Silicon carbon nitride (SiCN) crystals and silicon carbon nitride aligned microrods were synthesized on Si wafer by the novel microwave plasma chemical vapor deposition (MPCVD) system with CH4, H2, N2 and additional Si column as sources. The morphologies of the films were investigated by field emission scanning electron microscopy (SEM). The chemical bonding states of the SiCN crystals and the SiCN microrods were characterized by X-ray photoelectron spectroscopies (XPS) and Raman backscattering microscopies, suggesting that the films are multibonding structures. The X-ray diffraction spectra (XRD) revealed the SiCN crystals and microrods might possess a new hexagonal phase.

Key words: Silicon carbon nitride (SiCN) crystals and silicon carbon nitride aligned microrods were synthesized on Si wafer by the novel microwave plasma chemical vapor deposition (MPCVD) system with CH4, H2, N2 and additional Si column as sources. The morphologies of the films were investigated by field emission scanning electron microscopy (SEM). The chemical bonding states of the SiCN crystals and the SiCN microrods were characterized by X-ray photoelectron spectroscopies (XPS) and Raman backscattering microscopies, suggesting that the films are multibonding structures. The X-ray diffraction spectra (XRD) revealed the SiCN crystals and microrods might possess a new hexagonal phase.

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