Abstract: Thin platinum (Pt) films were prepared on single-crystal substrates MgAl2O4 (100) (MAO) and SrTiO3 (100) (STO) by a facing-target sputtering technique. The films prepared at higher substrate temperature (Ts= 700℃) were grown epitaxially with (200) orientation on SrTiO3 (100) and MgAl2O4 (100). Different from the lower resistivity of Pt/STO film, Pt/MAO film shows a very higher resistivity and the temperature dependence of the resistance exhibits insulator behavior because of the pinhole formation. We also grew epitaxial Pt (50 nm)/La0.67Ca0.33MnO3 (50nm)/STO structure, indicating that Pt is a good electrode for devices involving colossal magnetoresistance materials.

Key words: Thin platinum (Pt) films were prepared on single-crystal substrates MgAl2O4 (100) (MAO) and SrTiO3 (100) (STO) by a facing-target sputtering technique. The films prepared at higher substrate temperature (Ts= 700℃) were grown epitaxially with (200) orientation on SrTiO3 (100) and MgAl2O4 (100). Different from the lower resistivity of Pt/STO film, Pt/MAO film shows a very higher resistivity and the temperature dependence of the resistance exhibits insulator behavior because of the pinhole formation. We also grew epitaxial Pt (50 nm)/La0.67Ca0.33MnO3 (50nm)/STO structure, indicating that Pt is a good electrode for devices involving colossal magnetoresistance materials.