Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2005, Vol. 34 ›› Issue (3): 395-398.

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Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy

ZHANG Guan-jie;SHU Yong-chun;PI Biao;XING Xiao-dong;LIN Yao-wang;Yao Jiang-Hong;WANG Zhan-guo;XU Jing-jun

Online:2005-06-15 Published:2021-01-20

Abstract

CLC Number:

TN304

ZHANG Guan-jie;SHU Yong-chun;PI Biao;XING Xiao-dong;LIN Yao-wang;Yao Jiang-Hong;WANG Zhan-guo;XU Jing-jun. Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy[J]. Journal of Synthetic Crystals, 2005, 34(3): 395-398.

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Compatibility Study on Growing High Quality Modulation Doped GaAs and InP/InP Epilayers by Solid Source Molecular Beam Epitaxy

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