Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2005, Vol. 34 ›› Issue (4): 714-719.

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Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies

LIU Chang-Long;YIN Li-jun;LU Yi-ying;RUAN Yong-feng;E.Ntsoenzok;D.Alquier

Online:2005-08-15 Published:2021-01-20

Abstract

CLC Number:

O77

LIU Chang-Long;YIN Li-jun;LU Yi-ying;RUAN Yong-feng;E.Ntsoenzok;D.Alquier. Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies[J]. Journal of Synthetic Crystals, 2005, 34(4): 714-719.

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Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies

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