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JOURNAL OF SYNTHETIC CRYSTALS ›› 2005, Vol. 34 ›› Issue (5): 907-910.
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FENG Yu-chun;HU Jia-hui;ZHANG Jian-bao;WANG Wen-xin;ZHU Jun-shan;YANG Jian-wen;GUO Bao-ping
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RSSPublished:2021-01-20
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FENG Yu-chun;HU Jia-hui;ZHANG Jian-bao;WANG Wen-xin;ZHU Jun-shan;YANG Jian-wen;GUO Bao-ping. Influence of Transitional Layers and Growth Parameters on the Properties of GaN Grown on Si(111)[J]. Journal of Synthetic Crystals, 2005, 34(5): 907-910.
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