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JOURNAL OF SYNTHETIC CRYSTALS ›› 2006, Vol. 35 ›› Issue (2): 337-341.

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Growth of Single Crystalline 4H-SiC Film by Pyrogenation of PS/OCS/Si (111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

WANG Yu-xia;LI Yun;CHEN Zheng;HE Hai-ping;WANG Jian-wen;ZOU You-ming   

  • Online:2006-04-15 Published:2021-01-20

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