Study on the Mechanism of Amorphous Silicon Film Prepared by Rapid Thermal Annealing Process

Welcome to Journal of Synthetic Crystals! Today is

E-mail Alert　

RSS

Share:

JOURNAL OF SYNTHETIC CRYSTALS ›› 2006, Vol. 35 ›› Issue (5): 1137-1140.

Previous Articles Next Articles

Study on the Mechanism of Amorphous Silicon Film Prepared by Rapid Thermal Annealing Process

CHEN Yong-sheng;LU Jing-xiao;ZHANG Yu-xiang;WANG Sheng-zhao;YANG Shi-e;GAO Xiao-yong;Li Xiu-rui

Online:2006-10-15 Published:2021-01-20

Abstract

CLC Number:

TN304

CHEN Yong-sheng;LU Jing-xiao;ZHANG Yu-xiang;WANG Sheng-zhao;YANG Shi-e;GAO Xiao-yong;Li Xiu-rui. Study on the Mechanism of Amorphous Silicon Film Prepared by Rapid Thermal Annealing Process[J]. Journal of Synthetic Crystals, 2006, 35(5): 1137-1140.

[1]	LI Yang, CAO Kun, JIE Wanqi. Effect of Thermal Treated GaSb Substrate for Epitaxial Growth of CdZnTe Film by Close-Spaced Sublimation Method [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(10): 1705-1711.
[2]	WU Rui, HU Yang, TANG Rongfen, YANG Qian, WANG Xu, WU Yiyi, NIE Dengpan, WANG Huanjiang. Study of Gas-Phase Parasitic Reaction Pathways for ZnO Thin Film Grown by MOCVD [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1608-1619.
[3]	ZHONG Qiongli, WANG Xu, MA Kui, YANG Fashun. Effect of Al Doping on the Optical Properties of β-Ga₂O₃ Thin Films [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1352-1360.
[4]	KANG Jie, DING Ziyang, WANG Xiaoyan, LI Lianrong, SUN Weiyun, JIAO Can, SONG Yuepeng. Particle Size Regulation of SiC Quantum Dots Prepared by Corrosion Method and Effect of Size on Optical Properties [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(4): 684-691.
[5]	LI Chuanhao, LI Zhonghui, PENG Daqing, ZHANG Dongguo, YANG Qiankun, LUO Weike. Study on vdW Epitaxy Mechanism and Stress Modulation of Large-Size GaN Microwave Material [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 252-257.
[6]	MA Yulin, GUO Xiang, DING Zhao. Research Progress on the Preparation and Application of GaAsBi Semiconductor Materials [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(1): 25-37.
[7]	ZHAO Xiaobo, WEI Zhonghua, ZHANG Xu, QIAN Xun, YU Haohai. Research Progress of Chemical Vapor Deposition ZnS and ZnSe [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(12): 2125-2134.
[8]	WANG Liguang, RUI Yang, SHENG Wang, MA Yinshuang, MA Cheng, CHEN Weinan, ZOU Qipeng, DU Pengxuan, HUANG Liuqing, LUO Xuetao. Influence Mechanism of Crucible Rotation Rates on the Flow Field and Oxygen Concentration of the Semiconductor-Grade Czochralski Monocrystalline Silicon Melt under Transverse Magnetic Field [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(9): 1641-1650.
[9]	NIE Fan, HAN Shuo, ZENG Dongmei. Effect of Biaxial Strain on Electronic and Optical Properties of Single-Layer CdZnTe [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(8): 1394-1399.
[10]	CHEN Genqiang, ZHAO Xixiang, YU Zhongcheng, LI Zheng, WEI Qiang, LIN Fang, WANG Hongxing. Research Progress of Heteroepitaxial Single-Crystal Diamond and Related Electronic Devices [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 931-944.
[11]	SONG Changkun, HUANG Xiaoying, CHEN Yingxin, YU Ying, YU Siyuan. Modulation of Semiconductor Single Quantum Dots Using Molecular Beam Epitaxy [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(6): 982-996.
[12]	PENG Daqing, LI Zhonghui, CAI Likang, LI Chuanhao, YANG Qiankun, ZHANG Dongguo, LUO Weike. Growth and Properties of AlGaN/GaN Heterojunction Material with Coupled Barrier [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 746-752.
[13]	WU Ruiwen, SONG Huaping, YANG Junwei, QU Hongxia, LAI Xiaofang. Grinding Properties of 4H-SiC Single Crystal Substrate Using Polyurethane Pad [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 759-765.
[14]	YIN Xinyan, CHEN Peng, LIANG Zitong, ZHAO Hong. Epitaxial Growth and Optical Properties of InN film by MOCVD [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 791-797.
[15]	QU Pengfei, JIN Peng, ZHOU Guangdi, WANG Zhen, XU Dunzhou, WU Ju, ZHENG Hongjun, WANG Zhanguo. Research Status of Iridium-Based Composite Substrates for Heteroepitaxy of Single Crystal Diamond [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(5): 857-877.

Study on the Mechanism of Amorphous Silicon Film Prepared by Rapid Thermal Annealing Process

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Recommended Articles

Metrics

Comments