Studies of Interfacial Thermal Stresses in a GaAs-GaN Bond with the Electron Backscatter Diffraction

JOURNAL OF SYNTHETIC CRYSTALS ›› 2008, Vol. 37 ›› Issue (5): 1091-1096.

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Studies of Interfacial Thermal Stresses in a GaAs-GaN Bond with the Electron Backscatter Diffraction

TIAN Yan-bao;JI Yuan;ZHAO Yue;WU Di;GUO Xia;SHEN Guang-di;SUO Hong-li;ZHOU Mei-ling

Online:2008-10-15 Published:2021-01-20

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CLC Number:

TN454

TIAN Yan-bao;JI Yuan;ZHAO Yue;WU Di;GUO Xia;SHEN Guang-di;SUO Hong-li;ZHOU Mei-ling. Studies of Interfacial Thermal Stresses in a GaAs-GaN Bond with the Electron Backscatter Diffraction[J]. Journal of Synthetic Crystals, 2008, 37(5): 1091-1096.

Studies of Interfacial Thermal Stresses in a GaAs-GaN Bond with the Electron Backscatter Diffraction

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