Numerical Simulation of Effect Melt Level on the Interface Shape during φ300 mm Silicon Single Crystal Growth

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2008, Vol. 37 ›› Issue (6): 1571-1574.

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Numerical Simulation of Effect Melt Level on the Interface Shape during φ300 mm Silicon Single Crystal Growth

WANG Xue-feng;GAO Yu;DAI Xiao-lin;WU Zhi-qiang;ZHANG Guo-hu;ZHOU Qi-gang

Online:2008-12-15 Published:2021-01-20

Abstract

CLC Number:

TN304

WANG Xue-feng;GAO Yu;DAI Xiao-lin;WU Zhi-qiang;ZHANG Guo-hu;ZHOU Qi-gang. Numerical Simulation of Effect Melt Level on the Interface Shape during φ300 mm Silicon Single Crystal Growth[J]. Journal of Synthetic Crystals, 2008, 37(6): 1571-1574.

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Numerical Simulation of Effect Melt Level on the Interface Shape during φ300 mm Silicon Single Crystal Growth

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