Abstract: p-Si<100> substrates were used to make textured structure in alkaline and IPA solution, ZnO∶Al thin films were deposited on textured Si substrates by ultrasonic spray pyrolysis techniques. Front and back electrode were prepared by techniques of lithography, metal sputtering and high vacuum evaporation, and subsequently annealed at a temperature of 400 ℃ under nitrogen environments. Atom force microscope, hall effect measurement, X-ray diffractomer and current-voltage characterization were employed to characterize solar cell performance. As a result, the conversion efficiencies of the fabricated solar cells of about 5.2; were obtained, with V_(oc)=355 mV, I_(sc)=36 mA, FF=0.41. Textured heterojunction structure effectively reduces light reflects, increased effective p-n junction area, thus improve solar cell performance. Silicon oxide film due to oxygen diffusion at the ZnO/Si interface through the porous structure of the ZnO films were the main effect of the solar cell efficiency.