Abstract: An analytical model for the polarization fatigue under cyclic electric field of the perovskite ferroelectric thin films was proposed by incorporating the switch-induced charge-injection mechanism and the local phase decomposition theory into the oxygen vacancy electromigration model. The effects of the low permittivity interfacial layer on the fatigue property were analyzed with this model. The results showed that the interfacial layer is an crucial reason for polarization fatigue in ferroelectric thin films. The model can easily simulate the fatigue behavior of various ferroelectric thin films under different relaxation times, voltages, and temperatures.

Key words: An analytical model for the polarization fatigue under cyclic electric field of the perovskite ferroelectric thin films was proposed by incorporating the switch-induced charge-injection mechanism and the local phase decomposition theory into the oxygen vacancy electromigration model. The effects of the low permittivity interfacial layer on the fatigue property were analyzed with this model. The results showed that the interfacial layer is an crucial reason for polarization fatigue in ferroelectric thin films. The model can easily simulate the fatigue behavior of various ferroelectric thin films under different relaxation times, voltages, and temperatures.