Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing

JOURNAL OF SYNTHETIC CRYSTALS ›› 2011, Vol. 40 ›› Issue (2): 496-499.

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Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing

XIAO Qiang

Online:2011-04-15 Published:2021-01-20

Abstract

CLC Number:

TG580

XIAO Qiang. Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing[J]. Journal of Synthetic Crystals, 2011, 40(2): 496-499.

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Research on the Material Removal Rates and Surface Features of SiC Single Crystal by Ultrasonic Polishing

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