Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2011, Vol. 40 ›› Issue (4): 853-857.

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Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth

ZHANG Lei;SHAO Yong-liang;WU Yong-zhong;ZHANG Hao-dong;HAO Xiao-peng;JIANG Min-hua

Online:2011-08-15 Published:2021-01-20

Abstract

CLC Number:

O614

ZHANG Lei;SHAO Yong-liang;WU Yong-zhong;ZHANG Hao-dong;HAO Xiao-peng;JIANG Min-hua. Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth[J]. Journal of Synthetic Crystals, 2011, 40(4): 853-857.

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Simulation of Gas Distribution in HVPE Reactor and Influence of GaCl Carrier Gas Flow Rate on the GaN Crystal Growth

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